Magnetic domain crossover in FePt thin films

2010 ◽  
Vol 82 (14) ◽  
Author(s):  
E. Sallica Leva ◽  
R. C. Valente ◽  
F. Martínez Tabares ◽  
M. Vásquez Mansilla ◽  
S. Roshdestwensky ◽  
...  
2003 ◽  
Vol 266 (1-2) ◽  
pp. 171-177 ◽  
Author(s):  
T Shima ◽  
K Takanashi ◽  
Y.K Takahashi ◽  
K Hono ◽  
G.Q Li ◽  
...  

2014 ◽  
Vol 116 (13) ◽  
pp. 133904 ◽  
Author(s):  
Sougata Mallick ◽  
Subhankar Bedanta ◽  
Takeshi Seki ◽  
Koki Takanashi

2015 ◽  
Vol 48 (40) ◽  
pp. 405003 ◽  
Author(s):  
N R Álvarez ◽  
M E Vázquez Montalbetti ◽  
J E Gómez ◽  
A E Moya Riffo ◽  
M A Vicente Álvarez ◽  
...  

Author(s):  
B. G. Demczyk

CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.


2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio

1985 ◽  
Vol 48 ◽  
Author(s):  
P. Alexopoulos ◽  
R. H. Geiss ◽  
M. Schlenker

ABSTRACTThin films of Co-10 at% Pt, ranging from 15 to 90 nm in thickness, have been DC-sputtered at various temperatures on to carbon-coated mica, carbon substrates on copper grids, or (001) silicon single crystals under 3 μm pressure of Ar, using targets of the alloy in the hexagonal phase, at growth rates of 9 nm/min. The samples were investigated by TEM, using bright-and dark-field imaging, lattice imaging, selected area diffraction and both Fresnel and focussed Lorentz modes. The primary structure of the films was found to be hexagonal, with a = 0.255 nm and c = 0.414 nm. For the samples sputtered at room temperature, the grain sizes were on the order of 0.μm on carbon-coated mica and carbon-substrate grids, and approximately an order of magnitude smaller on silicon substrates. Heavy streaking along the [001] of the hexagonal matrix was observed on diffraction patterns for grains having the [001] parallel to the surface; this streaking was found to be associated with the presence of a high density of faults parallel to the (001). In films sputtered on to carbon-coated mica at 225 °C, where a substantial reduction of the coercivity is observed, the overwhelming majority of the grains had the (001) basal plane parallel to the surface. Lorentz microscopy showed the magnetic domain structure in films grown on silicon to be markedly different from those grown on the carbon substrates, and further changes occurred for the films grown at elevated temperatures.


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