scholarly journals Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

2010 ◽  
Vol 82 (11) ◽  
Author(s):  
L. Rondin ◽  
G. Dantelle ◽  
A. Slablab ◽  
F. Grosshans ◽  
F. Treussart ◽  
...  
Keyword(s):  
Charge State ◽  
Nitrogen Vacancy ◽  
Vacancy Defects ◽  
Induced Charge

scholarly journals Chemical control of the charge state of nitrogen-vacancy centers in diamond

2011 ◽  
Vol 83 (8) ◽  
Author(s):  
M. V. Hauf ◽  
B. Grotz ◽  
B. Naydenov ◽  
M. Dankerl ◽  
S. Pezzagna ◽  
...  
Keyword(s):  
Charge State ◽  
Chemical Control ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers

scholarly journals Localized chemical switching of the charge state of nitrogen-vacancy luminescence centers in diamond

2014 ◽  
Vol 105 (6) ◽  
pp. 063103 ◽  
Author(s):  
Toby W. Shanley ◽  
Aiden A. Martin ◽  
Igor Aharonovich ◽  
Milos Toth
Keyword(s):  
Charge State ◽  
Nitrogen Vacancy ◽  
Luminescence Centers

scholarly journals Spin-dependent charge state interconversion of nitrogen vacancy centers in nanodiamonds

2019 ◽  
Vol 99 (17) ◽  
Author(s):  
Reece P. Roberts ◽  
Mathieu L. Juan ◽  
Gabriel Molina-Terriza
Keyword(s):  
Charge State ◽  
Nitrogen Vacancy ◽  
Nitrogen Vacancy Centers

Photoluminescence of diamond containing nitrogen vacancy defects as a sensor of temperature upon exposure to vacuum- and extreme-ultraviolet radiation

2020 ◽  
Vol 22 (46) ◽  
pp. 26982-26986
Author(s):  
Hsiao-Chi Lu ◽  
Jen-Iu Lo ◽  
Yu-Chain Peng ◽  
Bing-Ming Cheng
Keyword(s):  
Ultraviolet Radiation ◽  
Vacuum Ultraviolet ◽  
Extreme Ultraviolet ◽  
Wavelength Region ◽  
Nitrogen Vacancy ◽  
Vacancy Defects ◽  
Extreme Ultraviolet Radiation ◽  
Nitrogen Vacancies

Upon excitation with vacuum-ultraviolet (VUV) and extreme-ultraviolet (EUV) radiation, diamond with nitrogen vacancies (DNV) emits strong photoluminescence (PL) in the wavelength region of 550–800 nm.

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p–i–n junction

2016 ◽  
Vol 63 ◽  
pp. 192-196 ◽  
Author(s):  
M. Shimizu ◽  
T. Makino ◽  
T. Iwasaki ◽  
J. Hasegawa ◽  
K. Tahara ◽  
...  
Keyword(s):  
Charge State ◽  
Nitrogen Vacancy ◽  
Forward Voltage ◽  
Nitrogen Vacancy Centers

Temperature- and illumination-induced charge-state change in divacancies of GaTe

2010 ◽  
Vol 81 (19) ◽  
Author(s):  
A. Zubiaga ◽  
F. Plazaola ◽  
J. A. García ◽  
C. Martínez-Tomás ◽  
V. Muñoz-Sanjosé
Keyword(s):  
Charge State ◽  
State Change ◽  
Induced Charge
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