Zero-bias conductance vanishing induced by the same-spin-band Andreev reflection in half-metallic ferromagnet/superconductor contacts

2010 ◽  
Vol 81 (22) ◽  
Author(s):  
C. D. Feng ◽  
Zhi Ming Zheng ◽  
R. Shen ◽  
Baigeng Wang ◽  
D. Y. Xing
2012 ◽  
Vol 26 (31) ◽  
pp. 1250205 ◽  
Author(s):  
LING TANG

Combining the first-principles noncollinear calculations of scattering matrices with Andreev approximation, we investigated the spin-triplet Andreev reflection (AR) spectra for the interface between half-metallic ferromagnet Co 2 MnSi and s-wave BCS superconductor Al with and without interfacial roughness, where the orientations of magnetic moments near the interface are randomly distributed. The calculated results show that the AR spectra have peak structures near zero bias for the clean interface with relative weak magnetic disorder. With the increasing degree of interfacial roughness or magnetic disorder, these subgap peaks of conductance spectra will be washed out. The results also show that the value of subgap conductance spectrum can be raised significantly by the magnetic disorder. Finally, our calculations reveal that the long-range spin-triplet AR in Co 2 MnSi / Al (001) interface can be enhanced by a small amount of interfacial roughness.


2016 ◽  
Vol 30 (13) ◽  
pp. 1642002 ◽  
Author(s):  
C. R. Granstrom ◽  
I. Fridman ◽  
H.-C. Lei ◽  
C. Petrovic ◽  
J. Y. T. Wei

To study how Andreev reflection (AR) occurs between a superconductor and a three-dimensional topological insulator (TI), we use superconducting Nb tips to perform point-contact AR spectroscopy at 4.2 K on as-grown single crystals of Bi2Se3. Scanning tunneling spectroscopy and scanning tunneling microscopy are also used to characterize the superconducting tip and both the doping level and surface condition of the TI sample. The point-contact measurements show clear spectral signatures of AR, as well as a depression of zero-bias conductance with decreasing junction impedance. The latter observation can be attributed to interfacial Rashba spin-orbit coupling, and the presence of bulk bands at the Fermi level in our samples suggests that bulk states of Bi2Se3 are involved in the observed AR.


2003 ◽  
Vol 17 (10n12) ◽  
pp. 505-518
Author(s):  
P. Mikheenko ◽  
R. Chakalov ◽  
R. I. Chakalova ◽  
M. S. Colclough ◽  
C. M. Muirhead

It has recently been proposed that if phase incoherent preformed pairs exist above critical temperature (Tc), Andreev reflection should be observable above Tc too. A distinctive feature of Andreev reflection is a zero bias conductance peak (ZBCP) in the conductance/voltage (G/V) characteristics. We have performed an extensive search for the ZBCP in HTS/normal-metal planar junctions including samples which have been annealed in Argon in an attempt to induce underdoping and enhancement of the pseudogap temperature. We have observed a maximum in the G/V characteristics above Tc in a number of samples and contact configurations. In some samples this behavior persists up to room temperature, but has a very broad voltage scale, much greater than the gap voltage. In YBa 2 Cu 3 O x/ Au and YBa 2 Cu 3 O x/ Ag contacts the form and amplitude of the ZBCP is close to the theoretical prediction, but the origin of this effect could also be in sample heating. One particularly curious result comes from an Au/LSMO/YBCO sample that shows a clear sub-gap ZBCP over the temperature range 15–266 K.


Nano Letters ◽  
2012 ◽  
Vol 12 (12) ◽  
pp. 6414-6419 ◽  
Author(s):  
M. T. Deng ◽  
C. L. Yu ◽  
G. Y. Huang ◽  
M. Larsson ◽  
P. Caroff ◽  
...  

2010 ◽  
Vol 84 (6) ◽  
pp. 717-721 ◽  
Author(s):  
Dibya Prakash Rai ◽  
Javad Hashemifar ◽  
Morteeza Jamal ◽  
Lalmuanpuia ◽  
M. P. Ghimire ◽  
...  

2008 ◽  
Vol 255 (3) ◽  
pp. 685-687 ◽  
Author(s):  
R. Tetean ◽  
L. Chioncel ◽  
E. Burzo ◽  
N. Bucur ◽  
A. Bezergheanu ◽  
...  

2018 ◽  
Vol 8 (11) ◽  
pp. 2200 ◽  
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Ming-sheng Wei ◽  
Bo Wu ◽  
Sikander Azam

Employing first-principle calculations, we investigated the influence of the impurity, Fe atom, on magnetism and electronic structures of Heusler compound Ti2CoSi, which is a spin gapless semiconductor (SGS). When the impurity, Fe atom, intervened, Ti2CoSi lost its SGS property. As TiA atoms (which locate at (0, 0, 0) site) are completely occupied by Fe, the compound converts to half-metallic ferromagnet (HMF) TiFeCoSi. During this SGS→HMF transition, the total magnetic moment linearly decreases as Fe concentration increases, following the Slate–Pauling rule well. When all Co atoms are substituted by Fe, the compound converts to nonmagnetic semiconductor Fe2TiSi. During this HMF→nonmagnetic semiconductor transition, when Fe concentration y ranges from y = 0.125 to y = 0.625, the magnetic moment of Fe atom is positive and linearly decreases, while those of impurity Fe and TiB (which locate at (0.25, 0.25, 0.25) site) are negative and linearly increase. When the impurity Fe concentration reaches up to y = 1, the magnetic moments of Ti, Fe, and Si return to zero, and the compound is a nonmagnetic semiconductor.


2017 ◽  
Vol 96 (7) ◽  
Author(s):  
Hui Li ◽  
Tong Zhou ◽  
Jun He ◽  
Huan-Wen Wang ◽  
Huachen Zhang ◽  
...  

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