Evidence of spin-polarized direct elastic tunneling and onset of superparamagnetism in MgO magnetic tunnel junctions

2010 ◽  
Vol 81 (13) ◽  
Author(s):  
J. M. Teixeira ◽  
J. Ventura ◽  
J. P. Araujo ◽  
J. B. Sousa ◽  
M. P. Fernández-García ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

Current hysteresis due to changes in magnetization of magnetic tunnel junctions by spin-polarized current

2001 ◽  
Vol 53 (5) ◽  
pp. 625-631 ◽  
Author(s):  
A. M Baranov ◽  
A. I Chmil ◽  
R. J Elliott ◽  
L. A Feigin ◽  
Yu. V Gulyaev ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

Non-Equilibrium Green’s Function Modeling of the Transport Characteristics of Magnetic Tunnel Junctions Containing Anderson Impurities

SPIN ◽  
2020 ◽  
Vol 10 (01) ◽  
pp. 2050006
Author(s):  
Parvathy Harikumar ◽  
S. Mathi Jaya
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Many Body ◽  
Applied Bias ◽  
Tunnel Current ◽  
Spin Polarized ◽  
Barrier Region ◽  
Non Equilibrium Green’S Function

A nonequilibrium Green’s function (NEGF) formulation to study the transport characteristics of magnetic tunnel junctions (MTJs) that contains impurities at the barrier region and many-body interaction at the electrode region is presented. The formulation makes use of the already developed NEGF method for MTJs without any impurities and the impurity Green’s function is obtained using Haldane’s approach that explicitly takes into account the on-site Coulomb interaction ([Formula: see text]) of the impurity. The formulation is used to obtain the spin-dependent tunnel current of model MTJs as a function of the applied bias for different values of [Formula: see text] corresponding to both the parallel and antiparallel configuration of the end electrodes of the MTJ. The tunnel currents are used to obtain the tunnel magnetoresistance (TMR) of the MTJ and we observed from our study that the TMR is strongly influenced by the impurities. The TMR is found to be reduced compared to that of the MTJ without impurities and the bias dependence of the TMR is found to be strongly influenced by [Formula: see text]. Our studies revealed that the MTJ can exhibit almost completely spin polarized current at certain values of [Formula: see text].

scholarly journals Spin-Polarized Electron Tunneling in bccFeCo/MgO/FeCo(001)Magnetic Tunnel Junctions

2012 ◽  
Vol 108 (17) ◽  
Author(s):  
F. Bonell ◽  
T. Hauet ◽  
S. Andrieu ◽  
F. Bertran ◽  
P. Le Fèvre ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

A two-band model of spin-polarized transport in Fe/Cr/MgO/Fe magnetic tunnel junctions

2010 ◽  
Vol 107 (9) ◽  
pp. 09C720 ◽  
Author(s):  
A. Vedyaev ◽  
N. Ryzhanova ◽  
N. Strelkov ◽  
M. Chshiev ◽  
B. Dieny
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Band Model ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport ◽  
Two Band Model

Spin-polarized conduction in oxide magnetic tunnel junctions with magnetic and nonmagnetic insulating barrier layers

2006 ◽  
Vol 89 (18) ◽  
pp. 182504 ◽  
Author(s):  
L. M. B. Alldredge ◽  
R. V. Chopdekar ◽  
B. B. Nelson-Cheeseman ◽  
Y. Suzuki
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Barrier Layers ◽  
Spin Polarized

Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions

2019 ◽  
Vol 7 (14) ◽  
pp. 4079-4088 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Xiaocha Wang
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Spin Injection ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Spin Polarized

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T4/LSMO organic magnetic tunnel junction.

Spin-Polarized Current in Spin Valves and Magnetic Tunnel Junctions

MRS Bulletin ◽  
2006 ◽  
Vol 31 (5) ◽  
pp. 389-394 ◽  
Author(s):  
Stuart Parkin
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Memory Storage ◽  
Tunnel Barrier ◽  
Tunnel Magnetoresistance ◽  
Ferromagnetic Electrodes ◽  
Diffusive Scattering ◽  
Spin Polarized ◽  
Tunnel Barriers

AbstractSpin-polarized currents can be generated by spin-dependent diffusive scattering in magnetic thin-film structures or by spin-dependent tunneling across ultrathin dielectrics sandwiched between magnetic electrodes.By manipulating the magnetic moments of the magnetic components of these spintronic materials, their resistance can be significantly changed, allowing the development of highly sensitive magnetic-field detectors or advanced magnetic memory storage elements.Whereas the magneto-resistance of useful devices based on spin-dependent diffusive scattering has hardly changed since its discovery nearly two decades ago, in the past five years there has been a remarkably rapid development in both the basic understanding of spin-dependent tunneling and the magnitude of useful tunnel magnetoresistance values.In particular, it is now evident that the magnitude of the spin polarization of tunneling currents in magnetic tunnel junctions not only is related to the spin-dependent electronic structure of the ferromagnetic electrodes but also is considerably influenced by the properties of the tunnel barrier and its interfaces with the magnetic electrodes.Whereas the maximum tunnel magnetoresistance of devices using amorphous alumina tunnel barriers and 3d transition-metal alloy ferromagnetic electrodes is about 70% at room temperature, using crystalline MgO tunnel barriers in otherwise the same structures gives tunnel magnetoresistance values of more than 350% at room temperature.

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