Shot noise reduction of space charge limited electron injection through a Schottky contact for a GaN diode

2010 ◽  
Vol 81 (12) ◽  
Author(s):  
W. Chandra ◽  
L. K. Ang ◽  
X. Zhou
Keyword(s):  
Space Charge ◽  
Noise Reduction ◽  
Shot Noise ◽  
Schottky Contact ◽  
Electron Injection ◽  
Space Charge Limited

THE FINITE BEAM SPACE-CHARGE LIMITED DIODE AS A NOISE TRANSDUCER

1961 ◽  
Vol 39 (4) ◽  
pp. 568-578
Author(s):  
R. A. McFarlane
Keyword(s):  
Electron Beam ◽  
Space Charge ◽  
Shot Noise ◽  
Anode Voltage ◽  
Electron Gun ◽  
Beam Diameter ◽  
Noise Current ◽  
Space Charge Limited

A method is presented for calculating the noise properties of a cylindrical electron beam from a space-charge limited diode electron gun. The multivelocity character of the beam is considered and correction is made for finite beam diameter. The ratio of anode noise current to full shot noise is found to depend on ω1/2/V0a where ω is the frequency and V0a the anode voltage.

A Unified Model for the Space Charge Limited Currents in Organic Materials Combining Field Dependent Mobility and Poole-Frenkel Detrapping

2001 ◽  
Vol 665 ◽  
Author(s):  
S. C. Jain ◽  
W. Geens ◽  
V. Kumar ◽  
A. Kapoor ◽  
A. Mehra ◽  
...  
Keyword(s):  
Space Charge ◽  
Schottky Contact ◽  
Unified Model ◽  
Zero Field ◽  
Field Dependent ◽  
Different Temperatures ◽  
Fast Rise ◽  
Space Charge Limited Currents ◽  
Bulk Space ◽  
Space Charge Limited

ABSTRACTWe have calculated J-V characteristics of an organic conducting sample (containing traps) including the Poole-Frenkel Effect (PFE). Both shallow and exponentially distributed traps are considered. We show that our approach is equivalent to combining the effect of trapping and using the field dependent mobility in one unified model. For shallow single level or shallow Gaussian traps, inclusion of PFE or using the (well-known) field dependent mobility gives the same dependence of current on voltage at a given temperature. However the value of zero field mobility µ0 comes out to be different. We have fabricated and measured the J-V curves of the ITO/MEH-OPV5/Al diodes. An extremely fast rise with voltage V is observed at small voltages, which can be interpreted either by the Schottky contact limited Shockley like current or by bulk space charge limited current with PFE. The correct mechanism can be determined by making J-V measurements at different temperatures.

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