Direct measurements of spin relaxation times of electrons in tunnel-coupled Ge/Si quantum dot arrays

2010 ◽  
Vol 81 (11) ◽  
Author(s):  
A. F. Zinovieva ◽  
A. V. Dvurechenskii ◽  
N. P. Stepina ◽  
A. I. Nikiforov ◽  
A. S. Lyubin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Relaxation ◽  
Relaxation Times ◽  
Si Quantum Dot ◽  
Direct Measurements

scholarly journals Fundamental limits of electron and nuclear spin qubit lifetimes in an isolated self-assembled quantum dot

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
George Gillard ◽  
Ian M. Griffiths ◽  
Gautham Ragunathan ◽  
Ata Ulhaq ◽  
Callum McEwan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Relaxation ◽  
Nuclear Spin ◽  
Operating Conditions ◽  
External Control ◽  
Spin Qubits ◽  
Fundamental Limits ◽  
Trade Offs ◽  
Wide Range ◽  
Spin Qubit

AbstractCombining external control with long spin lifetime and coherence is a key challenge for solid state spin qubits. Tunnel coupling with electron Fermi reservoir provides robust charge state control in semiconductor quantum dots, but results in undesired relaxation of electron and nuclear spins through mechanisms that lack complete understanding. Here, we unravel the contributions of tunnelling-assisted and phonon-assisted spin relaxation mechanisms by systematically adjusting the tunnelling coupling in a wide range, including the limit of an isolated quantum dot. These experiments reveal fundamental limits and trade-offs of quantum dot spin dynamics: while reduced tunnelling can be used to achieve electron spin qubit lifetimes exceeding 1 s, the optical spin initialisation fidelity is reduced below 80%, limited by Auger recombination. Comprehensive understanding of electron-nuclear spin relaxation attained here provides a roadmap for design of the optimal operating conditions in quantum dot spin qubits.

Photoluminescence enhancement in double Ge/Si quantum dot structures

JETP Letters ◽  
2016 ◽  
Vol 104 (12) ◽  
pp. 823-826 ◽  
Author(s):  
A. F. Zinovieva ◽  
V. A. Zinovyev ◽  
A. I. Nikiforov ◽  
V. A. Timofeev ◽  
A. V. Mudryi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Si Quantum Dot ◽  
Photoluminescence Enhancement

Efficiency improvement of Si quantum dot solar cells by activation with boron implantation

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 89-93 ◽  
Author(s):  
Gyea Young Kwak ◽  
Tae Gun Kim ◽  
Songwoung Hong ◽  
Ansoon Kim ◽  
Man Hyo Ha ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Efficiency Improvement ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Boron Implantation

scholarly journals Spin relaxation times of two-dimensional holes from spin sensitive bleaching of intersubband absorption

2004 ◽  
Vol 96 (1) ◽  
pp. 420-424 ◽  
Author(s):  
Petra Schneider ◽  
J. Kainz ◽  
S. D. Ganichev ◽  
S. N. Danilov ◽  
U. Rössler ◽  
...  
Keyword(s):  
Spin Relaxation ◽  
Relaxation Times ◽  
Two Dimensional ◽  
Intersubband Absorption

Graphene/Si-Quantum-Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

2015 ◽  
Vol 27 (16) ◽  
pp. 2614-2620 ◽  
Author(s):  
Dong Hee Shin ◽  
Sung Kim ◽  
Jong Min Kim ◽  
Chan Wook Jang ◽  
Ju Hwan Kim ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Si Quantum Dot ◽  
Heterojunction Diodes ◽  
High Photosensitivity

scholarly journals Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

2006 ◽  
Vol 1 (2) ◽  
pp. 137-153 ◽  
Author(s):  
V. G. Talalaev ◽  
G. E. Cirlin ◽  
A. A. Tonkikh ◽  
N. D. Zakharov ◽  
P. Werner ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Si Quantum Dot
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