scholarly journals Dynamical polarizability of graphene beyond the Dirac cone approximation

2010 ◽  
Vol 81 (8) ◽  
Author(s):  
T. Stauber ◽  
J. Schliemann ◽  
N. M. R. Peres
Keyword(s):  
Dirac Cone ◽  
Cone Approximation

scholarly journals On the Non-Local Surface Plasmons’ Contribution to the Casimir Force between Graphene Sheets

Physics ◽  
2020 ◽  
Vol 2 (1) ◽  
pp. 22-31
Author(s):  
Yan Francescato ◽  
Simon R. Pocock ◽  
Vincenzo Giannini
Keyword(s):  
Casimir Force ◽  
State Of The Art ◽  
Casimir Forces ◽  
Dirac Cone ◽  
Local Surface ◽  
Dramatic Effect ◽  
Non Local ◽  
Cone Approximation ◽  
Non Locality

Herein we demonstrate the dramatic effect of non-locality on the plasmons which contribute to the Casimir forces, with a graphene sandwich as a case study. The simplicity of this system allowed us to trace each contribution independently, as we observed that interband processes, although dominating the forces at short separations, are poorly accounted for in the framework of the Dirac cone approximation alone, and should be supplemented with other descriptions for energies higher than 2.5 eV. Finally, we proved that distances smaller than 200 nm, despite being extremely relevant to state-of-the-art measurements and nanotechnology applications, are inaccessible with closed-form response function calculations at present.

scholarly journals Optical conductivity of disordered graphene beyond the Dirac cone approximation

2011 ◽  
Vol 84 (19) ◽  
Author(s):  
Shengjun Yuan ◽  
Rafael Roldán ◽  
Hans De Raedt ◽  
Mikhail I. Katsnelson
Keyword(s):  
Optical Conductivity ◽  
Dirac Cone ◽  
Cone Approximation

scholarly journals Polarization of graphene in a strong magnetic field beyond the Dirac cone approximation

2012 ◽  
Vol 152 (15) ◽  
pp. 1446-1455 ◽  
Author(s):  
Shengjun Yuan ◽  
Rafael Roldán ◽  
Mikhail I. Katsnelson
Keyword(s):  
Magnetic Field ◽  
Strong Magnetic Field ◽  
Dirac Cone ◽  
Cone Approximation

The effects of Rashba spin–orbit coupling and Holstein phonons on thermodynamic properties of BN-doped graphene

2017 ◽  
Vol 31 (08) ◽  
pp. 1750045 ◽  
Author(s):  
Mohsen Yarmohammadi ◽  
Kavoos Mirabbaszadeh ◽  
Bahram Shirzadi
Keyword(s):  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Dirac Cone ◽  
Electronic Heat Capacity ◽  
Self Energy ◽  
Rashba Spin ◽  
Doped Graphene ◽  
Electronic Heat ◽  
Cone Approximation

Starting from the Holstein model, we have investigated the effects of Rashba spin–orbit coupling (RSOC) on density of states (DOS), electronic heat capacity (EHC) and magnetic susceptibility (MS) of boron nitride-doped (BN-doped) graphene beyond the Dirac cone approximation within the Green’s function approach. By using the self-consistent perturbation theory, retarded self-energy can be calculated. We have found that the band gap (the peak of EHC and MS) of the system increases (decreases) with RSOC and electron–phonon (e–ph) interaction. Also, the Schottky anomaly moves only to the higher temperatures for strong RSOCs and e–ph interactions. Also, our results show that the response of the system to an external magnetic field is scaled down in the presence of RSOC and e–ph interaction.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

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