scholarly journals Ground-state properties of the disordered Hubbard model in two dimensions

2010 ◽  
Vol 81 (7) ◽  
Author(s):  
Maria Elisabetta Pezzoli ◽  
Federico Becca
Keyword(s):  
Hubbard Model ◽  
Ground State ◽  
Two Dimensions ◽  
Ground State Properties

Hubbard model with one hole: Ground-state properties

1989 ◽  
Vol 40 (10) ◽  
pp. 6721-6725 ◽  
Author(s):  
E. Dagotto ◽  
A. Moreo ◽  
T. Barnes
Keyword(s):  
Hubbard Model ◽  
Ground State ◽  
Ground State Properties

Ground-state properties of the Hubbard model on aC60cluster

1993 ◽  
Vol 47 (18) ◽  
pp. 12316-12319 ◽  
Author(s):  
R. T. Scalettar ◽  
A. Moreo ◽  
E. Dagotto ◽  
L. Bergomi ◽  
T. Jolicoeur ◽  
...  
Keyword(s):  
Hubbard Model ◽  
Ground State ◽  
Ground State Properties

Ground state properties of half-filled Hubbard model

1997 ◽  
Vol 232 (3-4) ◽  
pp. 281-285
Author(s):  
Canio Noce ◽  
Mario Cuoco
Keyword(s):  
Hubbard Model ◽  
Ground State ◽  
Ground State Properties

Ground-state properties of theU=∞ Hubbard model on a 4×4 cluster

1993 ◽  
Vol 48 (22) ◽  
pp. 16539-16546 ◽  
Author(s):  
G. Chiappe ◽  
E. Louis ◽  
J. Gala´n ◽  
F. Guinea ◽  
J. A. Verge´s
Keyword(s):  
Hubbard Model ◽  
Ground State ◽  
Ground State Properties

scholarly journals Exact Ground-State Properties and Phase Transitions within One-dimensional Hubbard Model in Magnetic Field

2000 ◽  
Vol 14 (29n31) ◽  
pp. 3771-3776
Author(s):  
C. Yang ◽  
A. N. Kocharian ◽  
Y. L. Chiang
Keyword(s):  
Magnetic Field ◽  
Hubbard Model ◽  
Ground State ◽  
Chemical Potential ◽  
Interaction Strength ◽  
Upper And Lower Bounds ◽  
One Dimensional ◽  
Ground State Properties ◽  
Half Filling ◽  
The One

The phase diagram, the Bethe-ansatz ground-state properties, including the chemical potential μ, the spin (magnetic) and charge susceptibilities, are calculated within the one-dimensional Hubbard model in entire range of interaction strength (-∞< U/t<+∞), magnetic field (h≥ 0) and all electron concentrations (0≤n≤1). The continuous and smooth variation of μ with n and h in the vicinity of n=1 points on the gapless character of charge excitations at U<0 and provides rigorous upper and lower bounds for μ. The spin (magnetic) susceptability χ at half-filling changes discontinuously as U→0 and is strongly enhanced by electron repulsion, comparing with that of the non-interactig case. The compressibility κ ch increases with n at U<0 and shows non-monotonous behavior with a dramatic increase at U>0. Variations of κ ch -1 in both repulsive and attractive cases qualitatively well reproduces corresponding behavior of charge stiffness.

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