Magnetoresistance oscillations in multilayer systems: Triple quantum wells

2009 ◽  
Vol 80 (24) ◽  
Author(s):  
S. Wiedmann ◽  
N. C. Mamani ◽  
G. M. Gusev ◽  
O. E. Raichev ◽  
A. K. Bakarov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multilayer Systems ◽  
Magnetoresistance Oscillations

A THEORETICAL AND EXPERIMENTAL STUDY OF ELECTRONIC CONFINEMENT, COUPLING, AND TRANSLAYER INTERACTION IN NOBLE-METAL QUANTUM-WELL STRUCTURES

1994 ◽  
Vol 08 (18) ◽  
pp. 1075-1096 ◽  
Author(s):  
W. E. MCMAHON ◽  
T. MILLER ◽  
T.-C. CHIANG
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Noble Metal ◽  
Experimental Studies ◽  
Surface States ◽  
Double Quantum ◽  
Multilayer Systems ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Bloch Electrons

Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based upon Bloch electrons. In this paper, we will present our model and then give a description of some experimental studies which utilize the model. In particular, we will consider double-quantum-well systems which can be used to examine basic aspects of electronic confinement, layer–layer coupling, and translayer interaction through a barrier.

Magnetoresistance oscillations in triple quantum wells under microwave irradiation

2010 ◽  
Vol 42 (10) ◽  
pp. 2614-2617
Author(s):  
S. Wiedmann ◽  
N.C. Mamani ◽  
G.M. Gusev ◽  
O.E. Raichev ◽  
A.K. Bakarov ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Quantum Wells ◽  
Magnetoresistance Oscillations

scholarly journals Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells

2018 ◽  
Vol 98 (24) ◽  
Author(s):  
M. Otteneder ◽  
I. A. Dmitriev ◽  
S. Candussio ◽  
M. L. Savchenko ◽  
D. A. Kozlov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Terahertz Radiation ◽  
Magnetoresistance Oscillations

MAGNETORESISTANCE OSCILLATIONS IN DOUBLE QUANTUM WELLS UNDER MICROWAVE IRRADIATION

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2943-2947
Author(s):  
S. WIEDMANN ◽  
G. M. GUSEV ◽  
O. E. RAICHEV ◽  
T. E. LAMAS ◽  
A. K. BAKAROV ◽  
...  
Keyword(s):  
Experimental Investigation ◽  
Distribution Function ◽  
Microwave Irradiation ◽  
Quantum Wells ◽  
Electron Distribution ◽  
Electron Distribution Function ◽  
Double Quantum ◽  
Magnetoresistance Oscillations ◽  
Interference Oscillations ◽  
Frequency Power

We report in detail oscillatory magnetoresistance in double quantum wells under microwave irradiation. The experimental investigation contains measurements of frequency, power and temperature dependence. In theory, the observed interference oscillations are explained in terms of the influence of subband coupling on the frequency-dependent photoinduced part of the electron distribution function. Thus, the magnetoresistance shows the interference of magneto-intersubband and conventional microwave induced resistance oscillations.

TRANSPORT IN A BILAYER SYSTEM AT HIGH LANDAU FILLING FACTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2603-2606
Author(s):  
G. M. GUSEV
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Filling Factor ◽  
Quantum Hall ◽  
Perpendicular Magnetic Field ◽  
Shubnikov De Haas Oscillations ◽  
Sdh Oscillations ◽  
Magnetoresistance Oscillations

We have studied Shubnikov de Haas oscillations and the quantum Hall effect in GaAs -double well structures in tilted magnetic fields. We found strong magnetoresistance oscillations as a function of an in-plane magnetic field B∥ at ν = 4N + 3 and ν = 4N + 1 filling factors. At low perpendicular magnetic field B⊥, the amplitude of the conventional Shubnikov-de Haas (SdH) oscillations also exhibits B∥-periodic dependence at fixed values of B⊥. We interpret the observed oscillations as a manifestation of the interference between cyclotron orbits in different quantum wells.

Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films

1994 ◽  
Vol 52 ◽  
pp. 796-797
Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Scale ◽  
Island Growth ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Mgo Substrate

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

Sign in / Sign up

Export Citation Format

Share Document