scholarly journals Optical properties and optimization of electromagnetically induced transparency in strained InAs/GaAs quantum dot structures

2009 ◽  
Vol 80 (23) ◽  
Author(s):  
D. Barettin ◽  
J. Houmark ◽  
B. Lassen ◽  
M. Willatzen ◽  
T. R. Nielsen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Electromagnetically Induced Transparency ◽  
Gaas Quantum Dot ◽  
Induced Transparency

FAR INFRARED PHOTO DETECTOR BASED ON ELECTROMAGNETICALLY INDUCED TRANSPARENCY

2013 ◽  
Vol 27 (05) ◽  
pp. 1350004 ◽  
Author(s):  
SEYYED HOSSEIN ASADPOUR ◽  
AMIR SOLTANI ◽  
ABDULLAH ESLAMI MAJD ◽  
HAMID RAHIMPOUR SOLEIMANI
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Electromagnetically Induced Transparency ◽  
Far Infrared ◽  
Optical Probe ◽  
Probe Signal ◽  
Long Wavelength ◽  
Gaas Quantum Dot ◽  
Induced Transparency ◽  
Long Wavelength Infrared

In this paper, we design a room temperature long wavelength quantum dot infrared photo detector (QDIP) by considering the principle of electromagnetically induced transparency (EIT) in a nanocrystal composed of a spherical GaAs quantum dot (QD) embedded in InAs . It is shown that the presence of long wavelength infrared (IR) signal in the medium affects on the absorption of visible optical probe (λp) in proposed photo detector. The far IR wavelength (λ FIR ) can be tuned to be 20 μm by means of external voltage and the size of QD. It is found that increasing the magnitude of far IR signal in the medium results in increase of optical probe signal absorption.

Optical Properties from a Single GaAs Quantum Dot Structure

2021 ◽  
Vol 21 (9) ◽  
pp. 4908-4910
Author(s):  
Heedae Kim
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Power Factor ◽  
Energy Difference ◽  
Large Energy ◽  
Gaas Quantum Dot ◽  
Perpendicular Polarization

We observed exciton and biexciton states in a single GaAs quantum dot at 4 K using micro pho-toluminescence system and investigated power dependent photoluminescence measurements to identify both exciton and biexciton states. The biexciton and exciton states showed quadratic (a~2.2) and linear (a~0.95) increasing power factor, respectively. The large energy difference (~0.2 meV) from exciton states for the perpendicular polarization was observed.

Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor

2013 ◽  
Vol 11 (8) ◽  
pp. 082501-82507
Author(s):  
N. R. Senthil Kumar N. R. Senthil Kumar ◽  
A. John Peter A. John Peter ◽  
Chang Woo Lee Chang Woo Lee
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
G Factor ◽  
Gaas Quantum Dot

Controlling Optical Storage in Semiconductor Quantum Dot Electromagnetically Induced Transparency by Phonon-Assisted Transition

2017 ◽  
Vol 54 (8) ◽  
pp. 082701
Author(s):  
黎方名 Li Fangming ◽  
王登龙 Wang Denglong ◽  
佘彦超 She Yanchao ◽  
丁建文 Ding Jianwen ◽  
肖思国 Xiao Siguo
Keyword(s):  
Quantum Dot ◽  
Electromagnetically Induced Transparency ◽  
Optical Storage ◽  
Semiconductor Quantum Dot ◽  
Induced Transparency

Structural and optical properties of ultrananocrystalline diamond / InGaAs/GaAs quantum dot structures

2009 ◽  
Vol 518 (5) ◽  
pp. 1489-1492 ◽  
Author(s):  
C. Popov ◽  
A. Gushterov ◽  
L. Lingys ◽  
C. Sippel ◽  
J.P. Reithmaier
Keyword(s):  
Optical Properties ◽  
Quantum Dot ◽  
Structural And Optical Properties ◽  
Ultrananocrystalline Diamond ◽  
Gaas Quantum Dot
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