Nonadiabatic spin-transfer torque in (Ga,Mn)As with perpendicular anisotropy

2009 ◽  
Vol 80 (19) ◽  
Author(s):  
J.-P. Adam ◽  
N. Vernier ◽  
J. Ferré ◽  
A. Thiaville ◽  
V. Jeudy ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Perpendicular Anisotropy

Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices (invited)

2011 ◽  
Vol 109 (7) ◽  
pp. 07C707 ◽  
Author(s):  
R. Sbiaa ◽  
S. Y. H. Lua ◽  
R. Law ◽  
H. Meng ◽  
R. Lye ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Perpendicular Anisotropy ◽  
Switching Current

Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque

2015 ◽  
Vol 48 (6) ◽  
pp. 065001 ◽  
Author(s):  
Zhaohao Wang ◽  
Weisheng Zhao ◽  
Erya Deng ◽  
Jacques-Olivier Klein ◽  
Claude Chappert
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Perpendicular Anisotropy

Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy

2011 ◽  
Vol 45 (2) ◽  
pp. 025001 ◽  
Author(s):  
Hui Zhao ◽  
Brian Glass ◽  
Pedram Khalili Amiri ◽  
Andrew Lyle ◽  
Yisong Zhang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Perpendicular Anisotropy

scholarly journals Spin-transfer-torque reversal in perpendicular anisotropy spin valves with composite free layers

2011 ◽  
Vol 99 (13) ◽  
pp. 132502 ◽  
Author(s):  
I. Yulaev ◽  
M. V. Lubarda ◽  
S. Mangin ◽  
V. Lomakin ◽  
Eric E. Fullerton
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Valves ◽  
Perpendicular Anisotropy

MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability

2014 ◽  
Vol 95 ◽  
pp. 126-135
Author(s):  
Ioan Lucian Prejbeanu ◽  
Sebastien Bandiera ◽  
Ricardo Sousa ◽  
Bernard Dieny
Keyword(s):  
Thermal Stability ◽  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
High Thermal Stability ◽  
High Density ◽  
Spin Transfer ◽  
Perpendicular Anisotropy ◽  
Current Switching ◽  
Technology Nodes

This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.

Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy

2011 ◽  
Vol 99 (9) ◽  
pp. 092506 ◽  
Author(s):  
R. Sbiaa ◽  
R. Law ◽  
S. Y. H. Lua ◽  
E. L. Tan ◽  
T. Tahmasebi ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Perpendicular Anisotropy
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