Density-functional analysis of spin exchange and ferroelectric polarization inAgCrO2

2009 ◽  
Vol 80 (10) ◽  
Author(s):  
E. J. Kan ◽  
H. J. Xiang ◽  
Y. Zhang ◽  
C. Lee ◽  
M.-H. Whangbo
Keyword(s):  
Functional Analysis ◽  
Density Functional ◽  
Spin Exchange ◽  
Ferroelectric Polarization

Half-metallic ferromagnetism in V-doped ZnTe semiconductor at reduced dopant concentration

2014 ◽  
Vol 28 (13) ◽  
pp. 1450104 ◽  
Author(s):  
M. Sajjad ◽  
H. X. Zhang ◽  
N. A. Noor ◽  
S. M. Alay-e-Abbas ◽  
M. Abid ◽  
...  
Keyword(s):  
Density Functional ◽  
Spin Exchange ◽  
Density Functional Theory Calculations ◽  
Orbital Method ◽  
Ferromagnetic Behavior ◽  
Full Potential ◽  
Local Spin Density Approximation ◽  
Generalized Gradient ◽  
Half Metallic ◽  
Bonding Properties

In this study, we examine the structural, electronic, magnetic and bonding properties of zincblende phase Zn 1-x V x Te (x = 0.0625, 0.125, 0.25) compounds to present them as suitable candidates for spintronic applications. Density functional theory calculations have been used by implementing the accurate full-potential linear-augmented-planewave plus local-orbital method. Structural properties have been computed using Wu–Cohen generalized gradient approximation, whereas the modified Becke and Johnson local (spin) density approximation (mBJLDA) function has been employed for the evaluating ground state electronic properties and ferromagnetic behavior. The half-metallic (HM) ferromagnetism in Zn 1-x V x Te is analyzed in terms of V -3d states and it is shown that mBJLDA predicts wide HM gaps which promise the possibility of achieving V -doped ZnTe with high Curie temperature. The spin exchange splittings Δx(d) and Δx(pd) have been estimated and the contribution of conduction band (CB) and valence band (VB) in exchange splitting is calculated in terms of the exchange constants N0α and N0β. Furthermore, spin-polarized charge density calculation is presented for elucidating the bonding nature, while pressure dependence of total magnetic moment for three concentrations of V -doped ZnTe is also discussed.

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