scholarly journals Molecular hydrogen diffusion in nanostructured amorphous silicon thin films

2009 ◽  
Vol 80 (7) ◽  
Author(s):  
Fatiha Kail ◽  
Jordi Farjas ◽  
Pere Roura ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Molecular Hydrogen ◽  
Hydrogen Diffusion ◽  
Silicon Thin Films

Hydrogen Configurations in Microcrystallized Sputtered Amorphous Silicon.

1992 ◽  
Vol 283 ◽  
Author(s):  
L. Lusson ◽  
P. Elkaim ◽  
M. Cuniot ◽  
D. Ballutaud ◽  
R. Rizk ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Molecular Hydrogen ◽  
Film Growth ◽  
Amorphous Film ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Si Films ◽  
Small Clusters ◽  
Secondary Ion

ABSTRACTSuccessive deuterium diffusion and effusion experiments are performed on undoped microcrystalline silicon obtained from thermally crystallized sputtered amorphous silicon thin films. The effect of prior incorporation of deuterium during the amorphous film growth on the crystallization mechanism and on the microcrystalline film quality is probed by the use of the post hydrogenation procedure. In connection with the deuterium solubility as provided by secondary ion mass spectroscopy (SIMS) profiling, the analysis of the effusion spectra suggests the existence of large cavities in the crystallized a-Si:D films, containing most probably molecular hydrogen. They are absent in the corresponding crystallized non-deuterated a-Si films. Other deuterium configurations seem to be present in both kinds of samples such as weakly bonded deuterium in small clusters and at grain boundaries.

scholarly journals Influence of deposition parameters on the optical absorption of amorphous silicon thin films

2020 ◽  
Vol 2 (3) ◽  
Author(s):  
Lukas Terkowski ◽  
Iain W. Martin ◽  
Daniel Axmann ◽  
Malte Behrendsen ◽  
Felix Pein ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Silicon Thin Films ◽  
Deposition Parameters

Irradiation Effect on Al-Dispersed Amorphous Silicon Thin Films by Femtosecond Laser

2020 ◽  
Vol 984 ◽  
pp. 91-96
Author(s):  
Cheng Liu ◽  
Yu Hao Song ◽  
Dong Yang Li ◽  
Wei Li
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Laser Raman Spectroscopy ◽  
Irradiation Effect ◽  
Amorphous Thin Films ◽  
Laser Raman ◽  
Silicon Thin Films ◽  
Al Nanoparticles ◽  
Spot Area ◽  
Fs Laser

The structural and optical properties of amorphous silicon (a-Si) and Al-dispersed amorphous silicon (a-Si:Al) thin films irradiated by femtosecond (fs) laser at various energy densities are investigated comparatively in this article. It is found that there is an uneven crystallization in both amorphous thin films by means of optical microscopy and laser Raman spectroscopy respectively. The crystallization in each pulse spot area is gradually weakened from the center to the edge along with the energy dispersion of laser irradiation. The laser induced crystallization in a-Si thin films begins early and develops more extensively compared to that in a-Si:Al thin films, and Al nanoparticles inhibit somehow the crystallization of a-Si in a-Si:Al thin films.

Crystallization of Amorphous Silicon Thin Films by Microwave Heating

2014 ◽  
Vol 1666 ◽  
Author(s):  
Tomohiko Nakamura ◽  
Shinya Yoshidomi ◽  
Masahiko Hasumi ◽  
Toshiyuki Sameshima ◽  
Tomohisa Mizuno
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Amorphous Silicon ◽  
Microwave Heating ◽  
Volume Ratio ◽  
Heated Sample ◽  
Silicon Thin Films ◽  
Scattering Spectra ◽  
Raman Scattering Spectra ◽  
Si Films

ABSTRACTWe report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.

Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

2009 ◽  
Vol 255 (19) ◽  
pp. 8252-8256 ◽  
Author(s):  
Thanh Nga Nguyen ◽  
Van Duy Nguyen ◽  
Sungwook Jung ◽  
Junsin Yi
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Thin Films
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