scholarly journals Anomalous Hall effect in granular ferromagnetic metals and effects of weak localization

2009 ◽  
Vol 80 (4) ◽  
Author(s):  
Hendrik Meier ◽  
Maxim Yu. Kharitonov ◽  
Konstantin B. Efetov
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Ferromagnetic Metals

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

scholarly journals Anomalous Hall effect and weak localization corrections in a ferromagnet

2002 ◽  
Vol 242-245 ◽  
pp. 464-466 ◽  
Author(s):  
A Crépieux ◽  
J Wunderlich ◽  
V.K Dugaev ◽  
P Bruno
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

scholarly journals Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

2007 ◽  
Vol 99 (4) ◽  
Author(s):  
P. Mitra ◽  
R. Misra ◽  
A. F. Hebard ◽  
K. A. Muttalib ◽  
P. Wölfle
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

Giant Ferromagnetic Hall Coefficient in La0.5Ca0.5CoO3

1997 ◽  
Vol 474 ◽  
Author(s):  
A. V. Samoilov ◽  
N. -C. Yeh ◽  
R. P. Vasquez
Keyword(s):  
Magnetic Field ◽  
Magnetic Properties ◽  
Hall Effect ◽  
Hall Coefficient ◽  
Single Phase ◽  
Anomalous Hall Effect ◽  
Convincing Evidence ◽  
Hall Probe ◽  
Ferromagnetic Metals ◽  
Percolation Behavior

ABSTRACTWe report the studies of the Hall effect and magnetic properties in La0.5Ca0.5CoO3 thin films and ceramics. We use the local Hall probe and SQUID magnetometers to measure the magnetization M of the samples. Both below and above the Curie temperature, the Hall resistivity pxy(H) is shown to be proportional to M(H) (H is the applied magnetic field). Thus, our results provide convincing evidence for the anomalous Hall effect in these cobaltites. The value of the anomalous Hall coefficient Rs in La0.5Ca0.5CoO3 significantly exceeds those of other known single-phase ferromagnetic metals. We suggest that the coexistence of high- and low-spin configurations in the perovskite cobaltites, which gives rise to magnetic percolation behavior in La1-xCax.CoO3,may be responsible for the giant Ra.

Weak localization corrections to the anomalous Hall effect

2002 ◽  
Vol 240 (1-3) ◽  
pp. 159-161 ◽  
Author(s):  
V.K. Dugaev ◽  
A. Crépieux ◽  
P. Bruno
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

Localization Correction to Anomalous Hall Effect in the Perpendicular CoFeB Thin Films

SPIN ◽  
2015 ◽  
Vol 05 (04) ◽  
pp. 1540013
Author(s):  
Jinjun Ding ◽  
Xiaofei Yang ◽  
Tao Zhu
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sheet Resistance ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Skew Scattering ◽  
Mgo Layers

In this paper, we reported an obvious weak localization (WL) effect in perpendicular CoFeB sandwiched by Ta and MgO layers. The WL correction to the anomalous Hall effect (AHE) arises when the sheet resistance is larger than 1.5[Formula: see text]k[Formula: see text]. Furthermore, it is found that the mechanism of AHE is strongly related to the characteristic of the granularity in the MgO/CoFeB/Ta thin films. Both skew scattering and side jump mechanisms will give comparable contribution in the high disorder regime.

scholarly journals Relation between spin Hall effect and anomalous Hall effect in 3d ferromagnetic metals

2019 ◽  
Vol 99 (1) ◽  
Author(s):  
Yasutomo Omori ◽  
Edurne Sagasta ◽  
Yasuhiro Niimi ◽  
Martin Gradhand ◽  
Luis E. Hueso ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Spin Hall Effect ◽  
Ferromagnetic Metals
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