Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy

2009 ◽  
Vol 80 (4) ◽  
Author(s):  
V. F. Sapega ◽  
N. I. Sablina ◽  
I. E. Panaiotti ◽  
N. S. Averkiev ◽  
K. H. Ploog
Keyword(s):  
Spin Polarization ◽  
Photoluminescence Spectroscopy ◽  
Exchange Field ◽  
Hot Electron

Hot-electron scattering length by measurement of spin polarization

1974 ◽  
Vol 9 (10) ◽  
pp. 4035-4037 ◽  
Author(s):  
D. T. Pierce ◽  
H. C. Siegmann
Keyword(s):  
Spin Polarization ◽  
Electron Scattering ◽  
Scattering Length ◽  
Hot Electron

scholarly journals Microscopic Observation of π Spin Polarization by d Localized Spin in λ Type BETS Based Organic Superconductors

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1055
Author(s):  
Ko-ichi Hiraki ◽  
Toshihiro Takahashi ◽  
Hiroshi Akiba ◽  
Yutaka Nishio ◽  
Biao Zhou
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Spin Polarization ◽  
Organic Superconductors ◽  
Exchange Field ◽  
Superconducting Transition ◽  
Nmr Spectrum ◽  
Fe Sites ◽  
Low Magnetic Field ◽  
Ga Doping

In this study, 77Se NMR measurements were carried out to detect the π spin polarization of the organic BETS (BETS = Bis(ethylenedithio)tetraselenafulvalene) molecule of the field induced superconductor, λ-(BETS)2Fe1−xGaxCl4, which shows a superconducting transition at relatively low magnetic field compared to the non-doped λ-(BETS)2FeCl4. From the analysis of the NMR spectrum at low temperature, it was clarified that the exchange interaction between π and 3d spins in the Ga doping system is smaller than that in the Fe salt. It is also clarified that the conduction π spins feel the “averaged” exchange field from the localized 3d spins at the dilute Fe sites.

Accurate Tight-Binding Studies of Antiferromagnetic States in La2CuO4

1988 ◽  
Vol 141 ◽  
Author(s):  
W. E. Pickett ◽  
D. A. Papaconstantopoulos
Keyword(s):  
Electronic Structure ◽  
Band Structure ◽  
Spin Polarization ◽  
Tight Binding ◽  
Antiferromagnetic State ◽  
Exchange Field ◽  
Exchange Splitting ◽  
Binding Studies ◽  
Large Anisotropy ◽  
D Orbitals

AbstractAn accurate tight-binding parametrization of the electronic structure of La2CuO4 is used to investigate the effects of spin polarization of the Cu ion on the band structure and magnetic moment in the antiferromagnetic state. It is found that when an exchange splitting on the d(x2-y2) orbitals is imposed, a gap in the spectrum is obtained, whereas no gap is found if the splitting is imposed on all of the d orbitals or even on both d(x2 -y2) and d(z2) orbitals. This result suggests large anisotropy of the exchange field on the Cu ion.

Trade-off study of the SQUID read-out for a hot-electron micro-calorimeter

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-233-Pr3-236
Author(s):  
M. Frericks ◽  
H. F.C. Hoevers ◽  
P. de Groene ◽  
W. A. Mels ◽  
P. A.J. de Korte
Keyword(s):  
Hot Electron ◽  
Trade Off ◽  
Micro Calorimeter

Magnetization dynamics of irradiation-fabricated perpendicularly magnetized dots inside a softer magnetic matrix

2003 ◽  
Vol 777 ◽  
Author(s):  
T. Devolder ◽  
M. Belmeguenai ◽  
C. Chappert ◽  
H. Bernas ◽  
Y. Suzuki
Keyword(s):  
Domain Wall ◽  
Magnetic Anisotropy ◽  
Magnetization Reversal ◽  
Ion Irradiation ◽  
Magnetic Nanostructures ◽  
Magnetic Storage ◽  
Exchange Field ◽  
Static Magnetization ◽  
Specific Domain ◽  
Helium Ion

AbstractGlobal Helium ion irradiation can tune the magnetic properties of thin films, notably their magneto-crystalline anisotropy. Helium ion irradiation through nanofabricated masks can been used to produce sub-micron planar magnetic nanostructures of various types. Among these, perpendicularly magnetized dots in a matrix of weaker magnetic anisotropy are of special interest because their quasi-static magnetization reversal is nucleation-free and proceeds by a very specific domain wall injection from the magnetically “soft” matrix, which acts as a domain wall reservoir for the “hard” dot. This guarantees a remarkably weak coercivity dispersion. This new type of irradiation-fabricated magnetic device can also be designed to achieve high magnetic switching speeds, typically below 100 ps at a moderate applied field cost. The speed is obtained through the use of a very high effective magnetic field, and high resulting precession frequencies. During magnetization reversal, the effective field incorporates a significant exchange field, storing energy in the form of a domain wall surrounding a high magnetic anisotropy nanostructure's region of interest. The exchange field accelerates the reversal and lowers the cost in reversal field. Promising applications to magnetic storage are anticipated.

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