Impurity Conduction and the Metal-Nonmetal Transition in Manganese-Doped Gallium Arsenide

1973 ◽  
Vol 8 (8) ◽  
pp. 3803-3810 ◽  
Author(s):  
Dustin A. Woodbury ◽  
J. S. Blakemore
Keyword(s):  
Gallium Arsenide ◽  
Impurity Conduction ◽  
Nonmetal Transition

Impurity conduction in manganese-doped gallium arsenide

1974 ◽  
Vol 10 (4) ◽  
pp. 1760-1761 ◽  
Author(s):  
C. H. Seager ◽  
G. E. Pike
Keyword(s):  
Gallium Arsenide ◽  
Impurity Conduction

Metallic impurity conduction and metal-nonmetal transition in n-InSb at low temperature

Physica B+C ◽  
1981 ◽  
Vol 107 (1-3) ◽  
pp. 421-422
Author(s):  
Seizo Morita ◽  
Tetsuo Fukase ◽  
Yoshimasa Isawa ◽  
Shuichi Ishida ◽  
Yoji Koike ◽  
...  
Keyword(s):  
Low Temperature ◽  
Metallic Impurity ◽  
Impurity Conduction ◽  
Nonmetal Transition

EXPERIMENTAL VERIFICATION OF DLTS MODELS

2019 ◽  
Author(s):  
Nataliya Mitina ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Data Processing ◽  
Experimental Verification ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

2019 ◽  
Author(s):  
Aleksey Bogachev ◽  
Vladimir Krylov
Keyword(s):  
Activation Energy ◽  
Gallium Arsenide ◽  
Energy Dependence ◽  
Deep Level ◽  
Deep Levels ◽  
Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

Gallium Arsenide Integrated Circuits Decapsulation Technique Using Mixed Acid Chemistry For Die-Level Failure Analysis

2018 ◽  
Author(s):  
Harold Jeffrey M. Consigo ◽  
Ricardo S. Calanog ◽  
Melissa O. Caseria
Keyword(s):  
Gallium Arsenide ◽  
Sulfuric Acid ◽  
Nitric Acid ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Mixed Acid ◽  
Optimum Parameters ◽  
Plastic Package ◽  
Fuming Nitric Acid ◽  
Concentrated Sulfuric Acid

Abstract Gallium Arsenide (GaAs) integrated circuits have become popular these days with superior speed/power products that permit the development of systems that otherwise would have made it impossible or impractical to construct using silicon semiconductors. However, failure analysis remains to be very challenging as GaAs material is easily dissolved when it is reacted with fuming nitric acid used during standard decapsulation process. By utilizing enhanced chemical decapsulation technique with mixture of fuming nitric acid and concentrated sulfuric acid at a low temperature backed with statistical analysis, successful plastic package decapsulation happens to be reproducible mainly for die level failure analysis purposes. The paper aims to develop a chemical decapsulation process with optimum parameters needed to successfully decapsulate plastic molded GaAs integrated circuits for die level failure analysis.

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