In a series of publications, we developed a compact model for nanotransistors in which quantum transport in a variety of industrial nano-FETs was described quantitatively. The compact nanotransistor model allows for the extraction of important device parameters as the effective height of the source-drain barrier, device heating, and the quality of the coupling between conduction channel and the contacts. Starting from a basic description of quantum transport in a multi-terminal device in Landauer–Büttiker formalism, we give a detailed derivation of all relevant formulas necessary to construct our compact nanotransistor model. Here we make extensive use of the the R-matrix method.
Erratum to: Application of the R-matrix method in quantum transport simulations