scholarly journals Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance

2009 ◽  
Vol 79 (19) ◽  
Author(s):  
Alexey A. Kovalev ◽  
Yaroslav Tserkovnyak ◽  
Karel Výborný ◽  
Jairo Sinova
Keyword(s):  
Hall Effect ◽  
Transport Theory ◽  
Anomalous Hall Effect ◽  
Anisotropic Magnetoresistance ◽  
Multiple Band

Anisotropic magnetoresistance and anomalous Hall effect in manganite thin films

2005 ◽  
Vol 17 (17) ◽  
pp. 2733-2740 ◽  
Author(s):  
M Bibes ◽  
V Laukhin ◽  
S Valencia ◽  
B Martínez ◽  
J Fontcuberta ◽  
...  
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Anisotropic Magnetoresistance

scholarly journals Interfacial scattering effect on anisotropic magnetoresistance and anomalous Hall effect in Ta/Fe multilayers

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055813 ◽  
Author(s):  
Qiang Zhang ◽  
Junwei Zhang ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Peng Li ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Anisotropic Magnetoresistance ◽  
Scattering Effect ◽  
Interfacial Scattering

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

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