Positive binding energy of a biexciton confined in a localization center formed in a singleInxGa1−xN/GaNquantum disk
1996 ◽
Vol 166
(4)
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pp. 447-448
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Keyword(s):
Keyword(s):
2001 ◽
Vol 4
(8)
◽
pp. 627-642
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2018 ◽
Vol 15
(1)
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pp. 82-88
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