Residual stress estimation in ferroelectricPbTiO3thin films by Raman spectroscopy

2009 ◽  
Vol 79 (10) ◽  
Author(s):  
A. Bartasyte ◽  
S. Margueron ◽  
J. Kreisel ◽  
P. Bourson ◽  
O. Chaix-Pluchery ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Stress Estimation

Residual stress estimation of a silicon carbide-Kovar joint

1991 ◽  
Vol 26 (11) ◽  
pp. 2887-2892 ◽  
Author(s):  
Toshihiro Yamada ◽  
Motohiro Satoh ◽  
Akiomi Kohno ◽  
Kazuaki Yokoi
Keyword(s):  
Residual Stress ◽  
Silicon Carbide ◽  
Stress Estimation

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

scholarly journals Feasibility of Residual Stress Nondestructive Estimation Using the Nonlinear Property of Critical Refraction Longitudinal Wave

2017 ◽  
Vol 2017 ◽  
pp. 1-11
Author(s):  
Yu-Hua Zhang ◽  
Xin-Xin Li ◽  
Xiang-Hong Wang ◽  
Zhen-Feng Huang ◽  
Han-Ling Mao ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress State ◽  
Wave Velocity ◽  
Nonlinear Coefficient ◽  
Quantitative Information ◽  
Difficult Problem ◽  
Nonlinear Property ◽  
Deformation State ◽  
Stress Estimation ◽  
Nondestructive Estimation

Residual stress has significant influence on the performance of mechanical components, and the nondestructive estimation of residual stress is always a difficult problem. This study applies the relative nonlinear coefficient of critical refraction longitudinal (LCR) wave to nondestructively characterize the stress state of materials; the feasibility of residual stress estimation using the nonlinear property of LCR wave is verified. The nonlinear ultrasonic measurements based on LCR wave are conducted on components with known stress state to calculate the relative nonlinear coefficient. Experimental results indicate that the relative nonlinear coefficient monotonically increases with prestress and the increment of relative nonlinear coefficient is about 80%, while the wave velocity only decreases about 0.2%. The sensitivity of the relative nonlinear coefficient for stress is much higher than wave velocity. Furthermore, the dependence between the relative nonlinear coefficient and deformation state of components is found. The stress detection resolution based on the nonlinear property of LCR wave is 10 MPa, which has higher resolution than wave velocity. These results demonstrate that the nonlinear property of LCR wave is more suitable for stress characterization than wave velocity, and this quantitative information could be used for residual stress estimation.

scholarly journals Study on Local Residual Stress in a Nanocrystalline Cr2O3 Coating by Micro-Raman Spectroscopy

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 500 ◽  
Author(s):  
Qiu Li ◽  
Yanrong Gou ◽  
Tie-Gang Wang ◽  
Tingyi Gu ◽  
Qiang Yu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Coating Thickness ◽  
Service Performance ◽  
Premature Failure ◽  
Edge Zone ◽  
Micro Raman Spectroscopy ◽  
Local Areas ◽  
Thick Coatings ◽  
Si Wafer

Residual stress in coatings often affects the service performance of coatings, and the residual stresses in some local areas even lead to premature failure of coatings. In this work, we characterized the residual stress of local micro-areas of a nanocrystalline Cr2O3 coating deposited on a Si wafer through micro-Raman spectroscopy, including the depositional edge zone where the electrode was placed, the micro-area containing Cr2O3 macroparticles, and other micro-areas vulnerable to cracks. To accurately measure the thickness of the coating, we combined optical interferometry and direct measurement by a profilometer. The results indicate the existence of in-plane tensile residual stress on the Cr2O3 coating. In thick coatings, the residual stress is independent of the coating thickness and is stable between 0.55 GPa and 0.75 GPa. As the coating thickness is less than 0.8 μm, the residual stress is directly related to the coating thickness. This in-plane tensile stress is considered as the origin of the observed microcrack, which can partially release the stress.

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