Crossover between magnetic vortex attraction and repulsion in thin films of layered superconductors

2009 ◽  
Vol 79 (9) ◽  
Author(s):  
A. I. Buzdin ◽  
A. S. Mel’nikov ◽  
A. V. Samokhvalov ◽  
T. Akashi ◽  
T. Masui ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Vortex ◽  
Layered Superconductors

Anomalous, hysteretic, transverse magnetoresistance in superconducting thin films with magnetic vortex arrays

2009 ◽  
Vol 94 (25) ◽  
pp. 252507 ◽  
Author(s):  
J. E. Villegas ◽  
A. Sharoni ◽  
C.-P. Li ◽  
Ivan K. Schuller
Keyword(s):  
Thin Films ◽  
Magnetic Vortex ◽  
Superconducting Thin Films ◽  
Transverse Magnetoresistance

scholarly journals Vortex molecules in thin films of layered superconductors

2018 ◽  
Vol 44 (6) ◽  
pp. 534-542
Author(s):  
A. V. Samokhvalov ◽  
A. S. Mel'nikov ◽  
A. I. Buzdin
Keyword(s):  
Thin Films ◽  
Layered Superconductors ◽  
Vortex Molecules

Coherent magnetic vortex motion in optically formed channels for easy flow in YBa2Cu3O7−x superconducting thin films

2013 ◽  
Vol 113 (3) ◽  
pp. 327-332
Author(s):  
A. Jukna ◽  
L. Steponavičienė ◽  
V. Plaušinaitienė ◽  
A. Abrutis ◽  
A. Maneikis ◽  
...  
Keyword(s):  
Thin Films ◽  
Vortex Motion ◽  
Magnetic Vortex ◽  
Superconducting Thin Films

scholarly journals Vortex Molecules in Thin Films of Layered Superconductors

2013 ◽  
Vol 26 (9) ◽  
pp. 2853-2857 ◽  
Author(s):  
A. I. Buzdin ◽  
A. S. Mel’nikov ◽  
A. V. Samokhvalov
Keyword(s):  
Thin Films ◽  
Layered Superconductors ◽  
Vortex Molecules

Vortex fluctuations in layered superconductors and thin films

1993 ◽  
Vol 48 (14) ◽  
pp. 10448-10456 ◽  
Author(s):  
G. Blatter ◽  
B. Ivlev ◽  
H. Nordborg
Keyword(s):  
Thin Films ◽  
Layered Superconductors ◽  
Vortex Fluctuations

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

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