scholarly journals Hole doping of a Mott insulator with orbital degrees of freedom

2008 ◽  
Vol 78 (23) ◽  
Author(s):  
J. Sirker ◽  
J. Damerau ◽  
A. Klümper
Keyword(s):  
Degrees Of Freedom ◽  
Mott Insulator ◽  
Hole Doping

scholarly journals The analytical description of a doped Mott insulator

2019 ◽  
Vol 33 (29) ◽  
pp. 1950355
Author(s):  
Yu-Liang Liu
Keyword(s):  
Green’S Function ◽  
Coulomb Interaction ◽  
Green's Function ◽  
Doping Concentration ◽  
Cuprate Superconductors ◽  
Mott Insulator ◽  
Spin Fluctuations ◽  
Hole Doping ◽  
Charge Fluctuation ◽  
Doped Mott Insulator

With the hierarchical Green’s function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green’s function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green’s function is proportional to the hole doping concentration that is mainly produced by the charge fluctuation of electrons, while the excitation spectrum of the electrons is composed of two parts: One is contributed by the spin fluctuation of the electrons, which is proportional to the hole doping concentration, and another one is coming from the coupling between the charge and spin fluctuations of the electrons that takes the maximum at undoping. All of these low energy/temperature physical properties originate from the strong on-site Coulomb interaction. The present results are consistent with the spectroscopy observations of the cuprate superconductors and the numerical calculations in normal state above the pseudogap regime.

scholarly journals Electron and hole doping in the relativistic Mott insulator Sr2IrO4 : A first-principles study using band unfolding technique

2016 ◽  
Vol 94 (19) ◽  
Author(s):  
Peitao Liu ◽  
Michele Reticcioli ◽  
Bongjae Kim ◽  
Alessandra Continenza ◽  
Georg Kresse ◽  
...  
Keyword(s):  
First Principles ◽  
Mott Insulator ◽  
Hole Doping ◽  
First Principles Study

scholarly journals Topological Doping and Superconductivity in Cuprates: An Experimental Perspective

Symmetry ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 2365
Author(s):  
John M. Tranquada
Keyword(s):  
Degrees Of Freedom ◽  
Density Wave ◽  
Hole Doping ◽  
Geometric Frustration ◽  
Pair Density ◽  
Stripe Order ◽  
Translation Symmetry ◽  
Pairing Correlations ◽  
Antiferromagnetic Spin ◽  
Pair Density Wave

Hole doping into a correlated antiferromagnet leads to topological stripe correlations, involving charge stripes that separate antiferromagnetic spin stripes of opposite phases. The topological spin stripe order causes the spin degrees of freedom within the charge stripes to feel a geometric frustration with their environment. In the case of cuprates, where the charge stripes have the character of a hole-doped two-leg spin ladder, with corresponding pairing correlations, anti-phase Josephson coupling across the spin stripes can lead to a pair-density-wave order in which the broken translation symmetry of the superconducting wave function is accommodated by pairs with finite momentum. This scenario is now experimentally verified by recently reported measurements on La2−xBaxCuO4 with x=1/8. While pair-density-wave order is not common as a cuprate ground state, it provides a basis for understanding the uniform d-wave order that is more typical in superconducting cuprates.

scholarly journals Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl

Crystals ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 42
Author(s):  
Yoshitaka Kawasugi ◽  
Hiroshi M. Yamamoto
Keyword(s):  
Double Layer ◽  
Fermi Liquid ◽  
Electric Double Layer ◽  
Mott Insulator ◽  
Hole Doping ◽  
Many Body ◽  
Model Calculations ◽  
Simultaneous Control ◽  
Bandwidth Control ◽  
Many Body Systems

The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).

scholarly journals Lattice Dynamics Coupled to Charge and Spin Degrees of Freedom in the Molecular Dimer-Mott Insulator κ−(BEDT−TTF)2Cu[N(CN)2]Cl

2019 ◽  
Vol 123 (2) ◽  
Author(s):  
Masato Matsuura ◽  
Takahiko Sasaki ◽  
Satoshi Iguchi ◽  
Elena Gati ◽  
Jens Müller ◽  
...  
Keyword(s):  
Lattice Dynamics ◽  
Degrees Of Freedom ◽  
Mott Insulator

scholarly journals Electron–hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator

2016 ◽  
Vol 7 (1) ◽  
Author(s):  
Yoshitaka Kawasugi ◽  
Kazuhiro Seki ◽  
Yusuke Edagawa ◽  
Yoshiaki Sato ◽  
Jiang Pu ◽  
...  
Keyword(s):  
Fermi Surface ◽  
Mott Insulator ◽  
Hole Doping ◽  
Electron Hole

Spin-Orbit Interactions in Ruddlesden-Popper Phases Srn+1IrnO3n+1 (n = 1, 2, and ∞)

2021 ◽  
pp. 33-76
Author(s):  
Gang Cao ◽  
Lance E. DeLong
Keyword(s):  
Degrees Of Freedom ◽  
Magnetic State ◽  
Ground States ◽  
Mott Insulator ◽  
Conventional Wisdom ◽  
Metallic State ◽  
Chemical Doping ◽  
Spin Orbit ◽  
Coulomb Interactions ◽  
Spin Orbit Interactions

The Ruddlesden-Popper phases Srn+1IrnO3n+1 (n = 1, 2, and ∞) have been intensively studied, and exhibit many novel behaviors and ground states driven by a rare interplay between strong spin-orbit and Coulomb interactions. One key empirical trend is that most iridates are antiferromagnetic insulators, contrary to conventional wisdom. The spin-orbit-coupled Mott state does not always closely track the magnetic state in iridates. Often, chemical doping can effectively induce a metallic state. Defying expectations, Sr2IrO4, which is the prototypical spin-orbit-coupled Mott insulator, does not become superconducting upon electron doping, but remains insulating under applied pressures extending into the Mbar range, highlighting the extraordinary susceptibility to the lattice degrees of freedom, which is at the heart of the physics driving the iridates.

Doping Dependence of Bose Condensation Energy in High Tc Cuprates

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3231-3235
Author(s):  
Sung-Sik Lee ◽  
Sung-Ho Suck Salk
Keyword(s):  
Degrees Of Freedom ◽  
Doping Concentration ◽  
Bose Condensation ◽  
Hole Doping ◽  
Condensation Energy ◽  
Spin Gap ◽  
High Tc ◽  
Doping Dependence ◽  
Boson Theory ◽  
High Tc Cuprates

The doping dependence of the bose condensation energy is investigated by using our SU (2) holon-pair boson theory. It is shown that the bose condensation energy U results from the interplay between the charge and spin degrees of freedom and that the doping dependence of U at T=0K is well fit by the relation, [Formula: see text] with Δ0, the spin gap at 0K; x, the hole doping concentration and α, a constant.

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