Electrical evidence for the encapsulation ofC60inside a carbon nanotube: Random telegraph signal and hysteric current–voltage characteristics

2008 ◽  
Vol 78 (15) ◽  
Author(s):  
Han Young Yu ◽  
Dong Su Lee ◽  
Ursula Dettlaff-Weglikowska ◽  
Siegmar Roth ◽  
Yung Woo Park
Keyword(s):  
Carbon Nanotube ◽  
Random Telegraph Signal ◽  
Current Voltage ◽  
Current Voltage Characteristics

Non-linear current–voltage characteristics of electrically conducting carbon nanotube–polystyrene composites

2002 ◽  
Vol 4 (22) ◽  
pp. 5655-5662 ◽  
Author(s):  
P. C. P. Watts ◽  
W. K. Hsu ◽  
D. P. Randall ◽  
H. W. Kroto ◽  
D. R. M. Walton
Keyword(s):  
Carbon Nanotube ◽  
Electrically Conducting ◽  
Linear Current ◽  
Current Voltage ◽  
Non Linear ◽  
Current Voltage Characteristics

MODELING OF COAXIAL CARBON NANOTUBE SCHOTTKY DIODES

2010 ◽  
Vol 24 (17) ◽  
pp. 1883-1890
Author(s):  
ALIREZA KARGAR
Keyword(s):  
Carbon Nanotube ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Gate Insulator ◽  
Saturation Current ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

A carbon nanotube (CNT) Schottky diode based on coaxial geometry is presented. We show that coaxially gated CNT field effect transistors (FETs) with a p-type semiconducting single-walled carbon nanotube (s-SWNT) and asymmetric contacts can provide good diode characteristics. The effect of different physical and electrical parameters such as gate bias voltage, gate insulator thickness, and CNT diameter on the rectification current–voltage characteristics is investigated. We demonstrate that it is possible to tune the rectification characteristic, threshold voltage, reverse saturation current, and reverse turn-on voltage by using these parameters.

Self-consistent simulation of multi-walled CNT nanotransistors

2010 ◽  
Vol 2 (5) ◽  
pp. 453-456 ◽  
Author(s):  
Davide Mencarelli ◽  
Luca Pierantoni ◽  
Andrea D. Donato ◽  
Tullio Rozzi
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
The Self ◽  
Simulation Tool ◽  
Numerical Convergence ◽  
Current Voltage ◽  
Self Consistent ◽  
Current Voltage Characteristics

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

Temperature dependence of the current-voltage characteristics of a carbon-nanotube heterojunction

2001 ◽  
Vol 64 (16) ◽  
Author(s):  
Jinhee Kim ◽  
Jeong-O Lee ◽  
Hwangyou Oh ◽  
Kyung-Hwa Yoo ◽  
Ju-Jin Kim
Keyword(s):  
Carbon Nanotube ◽  
Temperature Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics
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