Magnetic coupling and electric conduction in oxide diluted magnetic semiconductors

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
H. Chou ◽  
C. P. Lin ◽  
J. C. A. Huang ◽  
H. S. Hsu
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Coupling ◽  
Electric Conduction ◽  
Diluted Magnetic

scholarly journals Temperature dependent magnetization of the two band model for diluted magnetic semiconductors

2014 ◽  
Vol 24 (2) ◽  
pp. 141
Author(s):  
Vu Kim Thai ◽  
Hoang Anh Tuan
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Coupling ◽  
Band Model ◽  
Coupling Constant ◽  
Temperature Dependent ◽  
Impurity Bands ◽  
Diluted Magnetic ◽  
Two Band Model ◽  
Temperature Dependent Magnetization

The temperature dependent magnetization of a two band model for diluted magnetic semiconductors as a function of magnetic coupling constant, hopping parameters and carrier densities is calculated by using the coherent potential approximation.  It is shown that the degree of overlapping of the impurity bands  and carrier density are crucial parameters determining the magnetization behavior of the system.

scholarly journals Two Band Model for Diluted Magnetic Semiconductors: Study of the Ferromagnetic Transition Temperature

2011 ◽  
Vol 21 (2) ◽  
pp. 125
Author(s):  
Vu Kim Thai ◽  
Hoang Anh Tuan
Keyword(s):  
Transition Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Magnetic Coupling ◽  
Coupling Constants ◽  
Band Model ◽  
Ferromagnetic Transition ◽  
Impurity Bands ◽  
Diluted Magnetic ◽  
Two Band Model

The ferromagnetic transition temperature (Tc) of a two band model for diluted magnetic semiconductors (DMS) is calculated by using the coherent potential approximation (CPA). It is shown that Tc is strongly parameter dependent on density of the carriers, magnetic coupling constants, and the hopping terms. The maximal Tc of the two band model is found when both impurity bands fully overlap and this value is approximately twice larger than the highest Tc obtained in the single band model.

THE MAGNETIC PROPERTIES OF II-VI GROUP Fe-TYPE DILUTED MAGNETIC SEMICONDUCTORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-873-C8-874
Author(s):  
H. J. M. Swagten ◽  
A. Twardowski ◽  
F. A. Arnouts ◽  
W. J. M. de Jonge ◽  
M. Demianiuk
Keyword(s):  
Magnetic Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic

Assessment of the H2 Followed by Air Sintering of Co-doped In2O3 Based Diluted Magnetic Semiconductors

2017 ◽  
Vol 9 (2) ◽  
pp. 02003-1-02003-3
Author(s):  
Rana Mukherji ◽  
◽  
Vishal Mathur ◽  
Arvind Samariya ◽  
Manishita Mukherji ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic ◽  
Co Doped
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