Disappearance of the quasi-one-dimensional plasmon at the metal-insulator phase transition of indium atomic wires

2008 ◽  
Vol 77 (20) ◽  
Author(s):  
Canhua Liu ◽  
Takeshi Inaoka ◽  
Shin Yaginuma ◽  
Tomonobu Nakayama ◽  
Masakazu Aono ◽  
...  
Keyword(s):  
Phase Transition ◽  
Metal Insulator ◽  
One Dimensional ◽  
Atomic Wires ◽  
Insulator Phase Transition

The character of metal-insulator phase transition in V2O3 from the plasmon behaviour

1983 ◽  
Vol 48 (5) ◽  
pp. 471-474 ◽  
Author(s):  
S Stizza ◽  
I Davoli ◽  
R Bernardini ◽  
A Bianconi ◽  
M Benfatto
Keyword(s):  
Phase Transition ◽  
Metal Insulator ◽  
Insulator Phase Transition

First-principles study on the heterostructure of twisted graphene/hexagonal boron nitride/graphene sandwich structure

2021 ◽  
Author(s):  
Yiheng Chen ◽  
Wen-Ti Guo ◽  
Zi-si Chen ◽  
Suyun Wang ◽  
Jian-Min Zhang
Keyword(s):  
Phase Transition ◽  
Boron Nitride ◽  
Charge Density ◽  
First Principles ◽  
Sandwich Structure ◽  
Hexagonal Boron Nitride ◽  
Mulliken Population ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Twisted Graphene

Abstract In recent years, the discovery of "magic angle" graphene has given new inspiration to the formation of heterojunctions. Similarly, the use of hexagonal boron nitride, known as white graphene, as a substrate for graphene devices has more aroused great interest in the graphene/hexagonal boron nitride (G/hBN) heterostructure system. Based on the first principles method of density functional theory, the band structure, density of states, Mulliken population, and differential charge density of a tightly packed model of twisted graphene/hexagonal boron nitride/graphene (G/hBN/G) sandwich structure have been studied. Through the establishment of heterostructure models TBG inserting hBN with different twisted angles, it was found that the band gap, Mulliken population, and charge density, exhibited specific evolution regulars with the rotation angle of the upper graphene, showing novel electronic properties and realizing metal-insulator phase transition. We find that the particular value of the twist angle at which the metal-insulator phase transition occurs and propose a rotational regulation mechanism with angular periodicity. Our results have guiding significance for the practical application of heterojunction electronic devices.

The metal-insulator phase transition in the strained GdBiTe3

2013 ◽  
Vol 113 (17) ◽  
pp. 17A934 ◽  
Author(s):  
Tran Van Quang ◽  
Miyoung Kim
Keyword(s):  
Phase Transition ◽  
Metal Insulator ◽  
Insulator Phase Transition

scholarly journals Magnetic field driven metal-insulator phase transition in planar systems

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
E. V. Gorbar ◽  
V. P. Gusynin ◽  
V. A. Miransky ◽  
I. A. Shovkovy
Keyword(s):  
Magnetic Field ◽  
Phase Transition ◽  
Metal Insulator ◽  
Insulator Phase Transition ◽  
Planar Systems

scholarly journals Effect of Sintering Temperature on Metal-Insulator Phase Transition in La1-xCaxMnO3 Perovskites

2020 ◽  
Vol 2 (1) ◽  
pp. 37-42
Author(s):  
Arunachalam M ◽  
Thamilmaran P ◽  
Sakthipandi K
Keyword(s):  
Phase Transition ◽  
Bulk Modulus ◽  
Sintering Temperature ◽  
Magnetic Sensors ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Wide Range ◽  
Different Temperatures ◽  
Insulator Phase Transition

Lanthanum calcium based perovskites are found to be advantageous for the possible applications in magnetic sensors/reading heads, cathodes in solid oxide fuel cells, and frequency switching devices. In the present investigation La0.3Ca0.7MnO3 perovskites were synthesised through solid state reaction and sintered at four different temperatures such as 900, 1000, 1100 and 1200˚ C. X-ray powder diffraction pattern confirms that the prepared La0.3Ca0.7MnO3 perovskites have orthorhombic structure with Pnma space group. Ultrasonic in-situ measurements have been carried out on the La0.3Ca0.7MnO3 perovskites over wide range of temperature and elastic constants such as bulk modulus of the prepared La0.3Ca0.7MnO3 perovskites was obtained as function of temperature. The temperature-dependent bulk modulus has shown an interesting anomaly at the metal-insulator phase transition. The metal insulator transition temperature derived from temperature-dependent bulk modulus increases from temperature 352˚ C to 367˚ C with the increase of sintering temperature from 900 to 1200˚ C.

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