Infrared single-photon detection by two-photon absorption in silicon

2008 ◽  
Vol 77 (12) ◽  
Author(s):  
Alex Hayat ◽  
Pavel Ginzburg ◽  
Meir Orenstein
2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.


2014 ◽  
Vol 92 (4) ◽  
pp. 284-288
Author(s):  
Seyyed Hossein Asadpour ◽  
H. Rahimpour Soleimani

In this paper, the effect of microwave field on the transient and steady state response of the four-level inverted Y-type atomic system is investigated. It is found that the properties of transient and steady processes can be affected by microwave field. It is found that the absorption spectrum behaves differentially for single-photon absorption and two-photon absorption. Also it is observed that in the one-photon absorption, the microwave field can lead to the probe gain and for two-photon absorption case, the strong microwave can enhance the absorption.


2020 ◽  
Author(s):  
Guangjian Xu ◽  
Xinyi Ren ◽  
Qucheng Miao ◽  
Ming Yan ◽  
Haifeng Pan ◽  
...  

Abstract The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3×10 -16 counts•pulse/photon 2 , 4.3×10 -15 counts•pulse/photon 2 , respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9×10 -16 counts•pulse/photon 2 . This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.


Author(s):  
Andreas Jechow

The interaction between single or a fixed number of photons with a single absorber is of fundamental interest in quantum technology. The harnessing of light matter interactions at the single particle limit has several potential applications ranging from quantum communication and quantum metrology to quantum imaging. In this letter, a setup for heralded two-photon absorption at the single absorber level is proposed. The setup is based on a heralded two-photon source utilizing spontaneous parametric down-conversion, entanglement swapping and sum frequency generation for joint detection. The feasibility of the scheme is discussed by reviewing recent achievements in utilizing entangled and correlated photons for two-photon absorption as well as single photon absorption experiments at the limit of single absorbers in the context of applications in imaging (here mainly microscopy) and spectroscopy.


Author(s):  
Panagiotis Vergyris ◽  
Florian Kaiser ◽  
Nicola Montaut ◽  
Olivier Alibart ◽  
Harald Herrmann ◽  
...  

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