Low-energy nonresonant x-ray scattering ofC60

2008 ◽  
Vol 77 (7) ◽  
Author(s):  
Paul Chow ◽  
Barry Friedman
Keyword(s):  
Low Energy ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

X-ray scattering by the fused silica surface etched by low-energy Ar ions

2019 ◽  
Vol 27 (5) ◽  
pp. 857-870 ◽  
Author(s):  
M.M. Barysheva ◽  
N.I. Chkhalo ◽  
M.N. Drozdov ◽  
M.S. Mikhailenko ◽  
A.E. Pestov ◽  
...  
Keyword(s):  
Silica Surface ◽  
Fused Silica ◽  
Low Energy ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Low Energy Electronic Excitations in the Layered Cuprates Studied by CopperL3Resonant Inelastic X-Ray Scattering

2004 ◽  
Vol 92 (11) ◽  
Author(s):  
G. Ghiringhelli ◽  
N. B. Brookes ◽  
E. Annese ◽  
H. Berger ◽  
C. Dallera ◽  
...  
Keyword(s):  
Low Energy ◽  
Electronic Excitations ◽  
X Ray ◽  
X Ray Scattering ◽  
Layered Cuprates ◽  
Ray Scattering

scholarly journals Resonant inelastic X-ray scattering of magnetic excitations under pressure

2019 ◽  
Vol 26 (5) ◽  
pp. 1725-1732 ◽  
Author(s):  
Matteo Rossi ◽  
Christian Henriquet ◽  
Jeroen Jacobs ◽  
Christian Donnerer ◽  
Stefano Boseggia ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Energy Resolution ◽  
Low Energy ◽  
Polarization Analysis ◽  
Magnetic Excitations ◽  
X Ray ◽  
X Ray Scattering ◽  
Sample Environment ◽  
Ray Scattering

Resonant inelastic X-ray scattering (RIXS) is an extremely valuable tool for the study of elementary, including magnetic, excitations in matter. The latest developments of this technique have mostly been aimed at improving the energy resolution and performing polarization analysis of the scattered radiation, with a great impact on the interpretation and applicability of RIXS. Instead, this article focuses on the sample environment and presents a setup for high-pressure low-temperature RIXS measurements of low-energy excitations. The feasibility of these experiments is proved by probing the magnetic excitations of the bilayer iridate Sr3Ir2O7 at pressures up to 12 GPa.

Inelastic x-ray scattering studies of low-energy charge excitations in graphite

2005 ◽  
Vol 72 (7) ◽  
Author(s):  
N. Hiraoka ◽  
H. Ishii ◽  
I. Jarrige ◽  
Y. Q. Cai
Keyword(s):  
Energy Charge ◽  
Low Energy ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

scholarly journals Determining the local low-energy excitations in the Kondo semimetalCeRu4Sn6using resonant inelastic x-ray scattering

2018 ◽  
Vol 98 (8) ◽  
Author(s):  
Andrea Amorese ◽  
Kurt Kummer ◽  
Nicholas B. Brookes ◽  
Oliver Stockert ◽  
Devashibhai T. Adroja ◽  
...  
Keyword(s):  
Low Energy ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Low energy excitation in liquid Sb and liquid Bi observed in inelastic x-ray scattering spectra

2021 ◽  
Vol 33 (47) ◽  
pp. 475101
Author(s):  
M Inui ◽  
Y Kajihara ◽  
S Hosokawa ◽  
A Chiba ◽  
Y Nakajima ◽  
...  
Keyword(s):  
Low Energy ◽  
Energy Excitation ◽  
X Ray ◽  
X Ray Scattering ◽  
Scattering Spectra ◽  
Ray Scattering

Structural properties of ultra-low-energy ion-implanted silicon studied by combined X-ray scattering methods

2006 ◽  
Vol 39 (4) ◽  
pp. 571-581 ◽  
Author(s):  
L. Capello ◽  
T. H. Metzger ◽  
V. Holý ◽  
M. Servidori ◽  
A. Malachias
Keyword(s):  
Structural Characterization ◽  
Bragg Reflection ◽  
Complete Characterization ◽  
Low Energy ◽  
Diffuse Intensity ◽  
Near Surface ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

The use of a combination of X-ray scattering techniques for the complete characterization of ultra-low-energy (E< 5 keV) implanted Si is discussed. Grazing incidence diffuse X-ray scattering (GI-DXS) reveals the properties of the defects confined within thin crystalline layers with depth resolution. Due to the weak diffuse intensity arising from such defects, the high brilliance of synchrotron radiation is required. GI-DXS proved to be particularly well suited for the investigation of the so-called `end-of-range' defects. In a complementary way, X-ray diffraction (XRD) in the vicinity of the 004 Bragg reflection is sensitive to the distribution of the strain in the Si lattice in the direction perpendicular to the sample surface. The structural characterization is complemented by the electron density profile of the near-surface amorphous region provided by specular reflectivity (SR). It will be shown that only by merging the results obtained with GI-DXS, XRD and SR, is it possible to obtain the detailed structural characterization of the implanted Si samples.

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