Structural relaxation in silicate glasses and melts: High-temperature Raman spectroscopy

2008 ◽  
Vol 77 (1) ◽  
Author(s):  
Wim J. Malfait ◽  
Werner E. Halter
1990 ◽  
Vol 205 ◽  
Author(s):  
L. De Wit ◽  
S. Roorda ◽  
W.C. Sinke ◽  
F.W. Saris ◽  
A.J.M. Berntsen ◽  
...  

Structural relaxation of amorphous Si is studied in the temperature range 500-850 °C using Raman spectroscopy. The minumum value for the Raman peakwidth that can be obtained is inversely proportional to the anneal temperature. The relaxation process is basically the same in a-Si prepared by ion implantation and by vacuum evaporation.


1961 ◽  
Vol 15 (2) ◽  
pp. 47-52 ◽  
Author(s):  
George J. Janz ◽  
Yukio Mikawa ◽  
David W. James

1993 ◽  
Vol 54 (11) ◽  
pp. 1579-1585 ◽  
Author(s):  
Yu.K. Voronko ◽  
A.V. Gorbachev ◽  
V.V. Osiko ◽  
A.A. Sobol ◽  
R.S. Feigelson ◽  
...  

1993 ◽  
Vol 47 (8) ◽  
pp. 1286-1288 ◽  
Author(s):  
Sheng Dai ◽  
G. Mamantov ◽  
J. E. Coffield ◽  
G. M. Begun ◽  
J. P. Young

Biopolymers ◽  
2017 ◽  
Vol 107 (6) ◽  
pp. e23017 ◽  
Author(s):  
Mark Fields ◽  
Nicholas Spencer ◽  
Jayesh Dudhia ◽  
Paul F. McMillan

2011 ◽  
Vol 2011 (8) ◽  
pp. 719-722 ◽  
Author(s):  
V. N. Bykov ◽  
T. N. Ivanova ◽  
O. N. Koroleva

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