Electron–acoustic-phonon interaction in core/shell nanocrystals and in quantum-dot quantum wells

2007 ◽  
Vol 76 (19) ◽  
Author(s):  
Chih-Li Weng ◽  
I-Chuen Chen ◽  
Yan-Chr Tsai
Keyword(s):  
Quantum Dot ◽  
Quantum Wells ◽  
Acoustic Phonon ◽  
Core Shell ◽  
Phonon Interaction ◽  
Electron Acoustic

scholarly journals Electron–acoustic-phonon interaction in core/shell Ge/Si and Si/Ge nanowires

2017 ◽  
Vol 95 (15) ◽  
Author(s):  
Darío G. Santiago-Pérez ◽  
C. Trallero-Giner ◽  
G. E. Marques
Keyword(s):  
Acoustic Phonon ◽  
Core Shell ◽  
Phonon Interaction ◽  
Electron Acoustic

Direct measurements of the electron–acoustic phonon interaction in GaAs quantum wire structures

1999 ◽  
Vol 263-264 ◽  
pp. 170-174 ◽  
Author(s):  
A.J Kent ◽  
A.J Naylor ◽  
I.A Pentland ◽  
P Hawker ◽  
M Henini
Keyword(s):  
Quantum Wire ◽  
Acoustic Phonon ◽  
Phonon Interaction ◽  
Direct Measurements ◽  
Electron Acoustic

DEPENDENCE OF EXCITON FORMATION ON ITS CENTER-OF-MASS MOMENTUM IN QUANTUM WELLS

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3660-3663 ◽  
Author(s):  
I.-K. OH ◽  
JAI SINGH
Keyword(s):  
Quantum Wells ◽  
Optical Phonon ◽  
Acoustic Phonon ◽  
Center Of Mass ◽  
Longitudinal Optical ◽  
Longitudinal Optical Phonon ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Carrier Temperature ◽  
Comprehensive Study

We present a comprehensive study of the process of exciton formation due to exciton-phonon interaction. Using the exciton-phonon interaction arising from deformation potential, piezoelectric, and polar couplings, we have calculated the rate of formation of an exciton as a function of carrier densitiies, temperatures, and center-of-mass momentum ( K ‖) in quantum wells. Our results show that excitons are dominantly formed at non-zero K ‖, which agrees very well with experiments. The formation of an exciton due to emission of longitudinal optical phonon is found to be more efficient at relatively small values of K ‖, and that due to acoustic phonon emission is more efficient at relatively large K ‖ values for carrier temperature Te-h≲50 K.

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