Effects of surface states on electrical characteristics of InN andIn1−xGaxN

2007 ◽  
Vol 76 (4) ◽  
Author(s):  
J. W. L. Yim ◽  
R. E. Jones ◽  
K. M. Yu ◽  
J. W. Ager ◽  
W. Walukiewicz ◽  
...  
Keyword(s):  
Surface States ◽  
Electrical Characteristics

The Electrical Characteristics of a Pd/AlN/Si Thin Film Hydrogen Gas Sensor

2003 ◽  
Vol 801 ◽  
Author(s):  
Erik F. McCullen ◽  
Haripriya E. Prakasam ◽  
Wenjun Mo ◽  
Jagdish Thakur ◽  
Ratna Naik ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface States ◽  
Hydrogen Gas ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Interface Traps ◽  
Electrical Characteristics ◽  
Film Sensor ◽  
Si Thin Film

ABSTRACTWe have extended our previous investigation of the electrical characteristics of a Pd/AlN/Si thin film sensor for varying thicknesses of AlN, from 300–2000Å. The capacitance vs. voltage, C(V), and conductance vs. voltage, G(V), measurements were utilized to investigate the presence of surface states within the Si gap at the AlN/Si interface. Our previous experiments on 500Å AlN did show the presence of interface traps, with an estimated surface density between 8×1014 and 1.5×1015 m−2eV−1 [1]. In our present work we've examined the effect of AlN thickness on the density of these interface traps. The density is dependent on AlN thickness. The thinner devices, 300Å, showed an interface trap density of 20–30×1015 m−2eV−1. The interface trap density decreased with increasing thickness up to 500Å, where the density remained relatively constant at about 1–5×1015 m−2eV−1 for thicknesses up to 2000Å. We have also shown that the interface trap density is independent of annealing.

Electrical Characteristics of Pt Schottky Contact to Semipolar (11-22) n-GaN Depending on Si Doping Concentration

2013 ◽  
Vol 404 ◽  
pp. 146-151
Author(s):  
Sung Min Jung ◽  
Kyoung Kook Kim ◽  
Sung Nam Lee ◽  
Hyun Soo Kim
Keyword(s):  
Carrier Transport ◽  
Doping Concentration ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Surface States ◽  
Incident Beam ◽  
Electrical Characteristics ◽  
X Ray ◽  
Si Doping ◽  
Thermionic Field Emission

Electrical characteristics of Pt Schottky contact formed on semipolar (11-22) n-type GaN planes with different Si doping concentration were investigated. Large Si doping to semipolar (11-22) n-GaN led to improved electrical and structural properties, e.g., the Hall mobility (μ) was increased by 35 % and the full width at half maximum (FWHM) of X-ray rocking curves with X-ray incident beam direction of [-1-12 was decreased by 34 %. Thermionic field emission (TFE) theory applied to the forward current-voltage (I-V) curves of fabricated Pt Schottky diodes yielded the Schottky barrier height (ΦB) of 1.64 and 1.84 eV, the tunneling parameter (E00) of 44 and 65 meV, and the ideality factor (n) of 1.83 and 2.57 for the lowly doped and highly doped samples, respectively, indicating that the Si doping affected the carrier transport properties substantially associated with the change of surface states density.

scholarly journals Physical Investigations on Bias-Free, Photo-Induced Hall Sensors Based on Pt/GaAs and Pt/Si Schottky Junctions

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3009
Author(s):  
Xiaolei Wang ◽  
Xupeng Sun ◽  
Shuainan Cui ◽  
Qianqian Yang ◽  
Tianrui Zhai ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Contact ◽  
Surface States ◽  
Open Circuit ◽  
Electrical Characteristics ◽  
Hall Voltage ◽  
Novel Structure ◽  
Hall Effects ◽  
Schottky Junctions ◽  
Hall Sensors

Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

Influence of the degradation on the surface states and electrical characteristics of EOS structures

1991 ◽  
Vol 251-252 ◽  
pp. A330
Author(s):  
E. Cabruja ◽  
A. Merlos ◽  
C. Cané ◽  
M. Lozano ◽  
J. Bausells ◽  
...  
Keyword(s):  
Surface States ◽  
Electrical Characteristics

Influence of the degradation on the surface states and electrical characteristics of EOS structures

1991 ◽  
Vol 251-252 ◽  
pp. 364-368 ◽  
Author(s):  
E. Cabruja ◽  
A. Merlos ◽  
C. Cané ◽  
M. Lozano ◽  
J. Bausells ◽  
...  
Keyword(s):  
Surface States ◽  
Electrical Characteristics

scholarly journals Macroscopic Behavior and Microscopic Factors of Electron Emission from Chained Nanocarbon Coatings

2019 ◽  
Vol 5 (3) ◽  
pp. 55 ◽  
Author(s):  
Daleri Boqizoda ◽  
Anatoly Zatsepin ◽  
Evgeny Buntov ◽  
Anatoly Slesarev ◽  
Daria Osheva ◽  
...  
Keyword(s):  
Electron Emission ◽  
Linear Chain ◽  
Spectral Characteristics ◽  
Surface States ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Temperature Range ◽  
Quantum Properties ◽  
Gaseous Environment ◽  
Computational Electronics

The carbyne-containing films based on linear-chain carbon are promising materials for the manufacture of electronic equipment components. These carbyne-containing materials can be used as active elements of computational electronics and as ultra-miniature sensors of gaseous environment. The temperature studies of the electrical characteristics of carbyne-containing films by most of the scientific groups are limited to the low temperature range in which the quantum properties of nanostructures are most pronounced. We studied carbyne-containing films with a thickness of 20 and 400 nm on copper and silicon substrates using optically stimulated electron emission (OSEE) in the temperature range from room temperature (RT) to 400 °C. Theoretical modeling explains the dependence of work function on termination groups and substrate lattice. Experimental data revealed a relationship between the spectral characteristics of electron emission and temperature. The spectral contributions of both surface states and bulk interband transitions were clearly distinguishable.

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

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