Single-molecule field-effect transistors: A computational study of the effects of contact geometry and gating-field orientation on conductance-switching properties

2007 ◽  
Vol 75 (19) ◽  
Author(s):  
Trilisa M. Perrine ◽  
Barry D. Dunietz
Keyword(s):  
Single Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Contact Geometry ◽  
Field Orientation ◽  
Conductance Switching

scholarly journals Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1493
Author(s):  
Sang-Kon Kim
Keyword(s):  
Field Effect ◽  
Extreme Ultraviolet ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Drain Current ◽  
Extreme Ultraviolet Lithography ◽  
Line Edge Roughness ◽  
Stochastic Fluctuation ◽  
Ultraviolet Lithography ◽  
Edge Roughness

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

Phenyl- and Thienyl-Ended Symmetric Azomethines and Azines as Model Compounds for n-Channel Organic Field-Effect Transistors: An Electrochemical and Computational Study

2014 ◽  
Vol 118 (8) ◽  
pp. 3984-3993 ◽  
Author(s):  
Barbara Vercelli ◽  
Mariacecilia Pasini ◽  
Anna Berlin ◽  
Juan Casado ◽  
J. Teodomiro López Navarrete ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Organic Field Effect Transistors ◽  
Model Compounds

A computational study on a multimode spin conductance switching by coordination isomerization in organometallic single-molecule junctions

2018 ◽  
Vol 20 (30) ◽  
pp. 20280-20286 ◽  
Author(s):  
Yingjie Jiang ◽  
Xiaodong Xu ◽  
Yangyang Hu ◽  
Guiling Zhang ◽  
Zhewen Liang ◽  
...  
Keyword(s):  
Single Molecule ◽  
Molecular Design ◽  
Computational Study ◽  
Conductance Switching ◽  
Single Molecule Junctions ◽  
Conductance States ◽  
Spin Conductance

Single-molecule junctions provide the additional flexibility of tuning the on/off conductance states through molecular design.

Dirac-cone induced gating enhancement in single-molecule field-effect transistors

Nanoscale ◽  
2019 ◽  
Vol 11 (27) ◽  
pp. 13117-13125 ◽  
Author(s):  
Hantao Sun ◽  
Xunshan Liu ◽  
Yanjie Su ◽  
Bing Deng ◽  
Hailin Peng ◽  
...  
Keyword(s):  
Solid State ◽  
Single Molecule ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dirac Cone ◽  
Electrostatic Gating ◽  
Bottom Gate

Dirac-cone induced electrostatic gating enhancement in single-molecule FETs with graphene electrodes and a solid-state local bottom gate.

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