Nonlinear electronic transport and anomalous resistance fluctuations in the stripe state ofLa2NiO4.14

2007 ◽  
Vol 75 (12) ◽  
Author(s):  
A. Pautrat ◽  
F. Giovannelli ◽  
N. Poirot
Keyword(s):  
Electronic Transport ◽  
Resistance Fluctuations ◽  
Stripe State

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

ELECTRONIC TRANSPORT PROPERTIES OF SILICON NANOWIRE CAGE

2018 ◽  
Author(s):  
Shenqiu Mo ◽  
Dengke Ma ◽  
Lina Yang ◽  
Meng An ◽  
Zhiyu Liu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Silicon Nanowire ◽  
Electronic Transport Properties

Noise properties of thin-film Ni-P resistors embedded in printed circuit boards

2013 ◽  
Vol 61 (3) ◽  
pp. 731-735
Author(s):  
A.W. Stadler ◽  
Z. Zawiślak ◽  
W. Stęplewski ◽  
A. Dziedzic
Keyword(s):  
Thin Film ◽  
Printed Circuit Boards ◽  
Circuit Boards ◽  
Noise Component ◽  
Printed Circuit ◽  
Resistance Bridge ◽  
Different Types ◽  
Signal Path ◽  
Resistance Fluctuations ◽  
Made In

Abstract. Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.

Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Transport Property ◽  
Schottky Diode ◽  
Electronic Transport ◽  
Supramolecular Structure ◽  
Light Emission ◽  
Electronic Transport Property ◽  
Blue Light Emission ◽  
Donor Acceptor ◽  
Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

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