scholarly journals Self-consistent calculation of the electron distribution near a quantum point contact in the integer quantum Hall effect

2007 ◽  
Vol 75 (4) ◽  
Author(s):  
A. Siddiki ◽  
F. Marquardt
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Distribution ◽  
Quantum Hall ◽  
Point Contact ◽  
Quantum Point Contact ◽  
Integer Quantum Hall Effect ◽  
Self Consistent ◽  
Integer Quantum ◽  
Quantum Point

scholarly journals Anomalous integer quantum Hall effect in the ballistic regime with quantum point contacts

1989 ◽  
Vol 62 (10) ◽  
pp. 1181-1184 ◽  
Author(s):  
B. J. van Wees ◽  
E. M. M. Willems ◽  
C. J. P. M. Harmans ◽  
C. W. J. Beenakker ◽  
H. van Houten ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Quantum Point Contacts ◽  
Point Contacts ◽  
Ballistic Regime ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Quantum Point

scholarly journals Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene

Nano Letters ◽  
2014 ◽  
Vol 14 (6) ◽  
pp. 3369-3373 ◽  
Author(s):  
Cassandra Chua ◽  
Malcolm Connolly ◽  
Arseniy Lartsev ◽  
Tom Yager ◽  
Samuel Lara-Avila ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Point Contact ◽  
Epitaxial Graphene ◽  
Quantum Point Contact ◽  
Quantum Point

scholarly journals Fractional quantum Hall effect in a quantum point contact at filling fraction 5/2

2007 ◽  
Vol 3 (8) ◽  
pp. 561-565 ◽  
Author(s):  
Jeffrey B. Miller ◽  
Iuliana P. Radu ◽  
Dominik M. Zumbühl ◽  
Eli M. Levenson-Falk ◽  
Marc A. Kastner ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Point Contact ◽  
Fractional Quantum Hall Effect ◽  
Quantum Point Contact ◽  
Filling Fraction ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Point

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Publisher’s Note: Charge Fractionalization in the Integer Quantum Hall Effect [Phys. Rev. Lett. 112, 166801 (2014)]

2014 ◽  
Vol 112 (18) ◽  
Author(s):  
Hiroyuki Inoue ◽  
Anna Grivnin ◽  
Nissim Ofek ◽  
Izhar Neder ◽  
Moty Heiblum ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum ◽  
Charge Fractionalization
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