Erratum:P−Hbonds in the surface unit cell of P-rich orderedInP(001)grown by metalorganic chemical vapor deposition [Phys. Rev. B71, 033308 (2005)]

2007 ◽  
Vol 75 (3) ◽  
Author(s):  
T. Letzig ◽  
H.-J. Schimper ◽  
T. Hannappel ◽  
F. Willig
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Unit Cell ◽  
Surface Unit ◽  
Surface Unit Cell ◽  
Metalorganic Chemical

High Quality YBaCuO Thin Film Growth by Low-Temperature Metalorganic Chemical Vapor Deposition Using Nitrous Oxide

1993 ◽  
Vol 335 ◽  
Author(s):  
Hideaki Zama ◽  
Jun Saga ◽  
Takeo Hattor ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Unit Cell ◽  
Temperature Growth ◽  
First Time ◽  
Metalorganic Chemical

AbstractLow-temperature growth of YBa2Cu3Ox films by metalorganic chemical vapor deposition using N2O as an oxidizing agent has been investigated. We have deposited superconducting YBa2Cu3Ox on (100)MgO substrates at 500°C for the first time. Films of 15nm-thick show zero-resistivity critical temperature of 80K. Films of as thin as three unit-cell-thick reveal the superconducting onset characteristics. This result suggests that superconductivity is arisen even from effectively monomolecular layer of YBa2Cu3Ox when we take into account monomolecular buffer layer and monomolecular cap layer. YBa2Cu3Ox films of 9nm-thick grown on (100)SrTiO3 at 600°C with Tc(zero) of 79K and with peak to valley roughness fluctuation of two unit-cell have been obtained.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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