scholarly journals Electron-phonon coupling in iron-doped yttrium aluminum garnet

2006 ◽  
Vol 74 (24) ◽  
Author(s):  
A. Anedda ◽  
C. M. Carbonaro ◽  
D. Chiriu ◽  
R. Corpino ◽  
M. Marceddu ◽  
...  
Keyword(s):  
Yttrium Aluminum Garnet ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Yttrium Aluminum ◽  
Iron Doped

Yag Single Crystals for Scintillators of Stem

1990 ◽  
Vol 48 (1) ◽  
pp. 166-167
Author(s):  
M. Hibino ◽  
K. Irie ◽  
R. Autrata ◽  
P. schauer
Keyword(s):  
Single Crystals ◽  
Yttrium Aluminum Garnet ◽  
Light Guide ◽  
Detection System ◽  
Polished Surface ◽  
Detective Quantum Efficiency ◽  
Backscattered Electrons ◽  
Electron Detection ◽  
Yttrium Aluminum ◽  
Phosphor Screens

Although powdered phosphor screens are usually used for scintillators of STEM, it has been found that the phosphor screen of appropriate thickness should be used depending on the accelerating voltage, in order to keep high detective quantum efficiency. 1 It has been also found that the variation in sensitivity, due to granularity of phosphor screens, makes the measurement of fine electron probe difficult and that the sensitivity reduces with electron irradiation specially at high voltages.In order to find out a preferable scintillator for STEM, single crystals of YAG (yttrium aluminum garnet), which are used for detecting secondary and backscattered electrons in SEM were investigated and compared with powdered phosphor screens, at the accelerating voltages of 100kV and 1 MV. A conventional electron detection system, consisting of scintillator, light guide and PMT (Hamamatsu Photonics R268) was used for measurements. Scintillators used are YAG single crystals of 1.0 to 3.2mm thicknesses (with surfaces matted for good interface to the light guide) and of 0.8mm thickness (with polished surface), and powdered P-46 phosphor screens of 0.07mm and 1.0mm thicknesses for 100kV and 1MV, respectively. Surfaces on electron-incidence side of all scintillators are coated with reflecting layers.

Observation of Core Phonon in Electron–Phonon Coupling in Au25 Nanoclusters

2021 ◽  
Vol 12 (6) ◽  
pp. 1690-1695
Author(s):  
Zhongyu Liu ◽  
Yingwei Li ◽  
Wonyong Shin ◽  
Rongchao Jin
Keyword(s):  
Phonon Coupling ◽  
Electron Phonon Coupling

scholarly journals Electron-phonon coupling in the magnetic Weyl semimetal ZrCo2Sn

2021 ◽  
Vol 103 (2) ◽  
Author(s):  
I.Yu. Sklyadneva ◽  
R. Heid ◽  
P. M. Echenique ◽  
E. V. Chulkov
Keyword(s):  
Phonon Coupling ◽  
Weyl Semimetal ◽  
Electron Phonon Coupling

scholarly journals Dielectric screening in perovskite photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Low Voltage ◽  
Power Conversion ◽  
Surface Recombination ◽  
Open Circuit ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Dielectric Screening ◽  
Perovskite Photovoltaic ◽  
Reduced Surface

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

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