scholarly journals Transport properties of n-type ultrananocrystalline diamond films

2006 ◽  
Vol 74 (23) ◽  
Author(s):  
I. S. Beloborodov ◽  
P. Zapol ◽  
D. M. Gruen ◽  
L. A. Curtiss
Keyword(s):  
Transport Properties ◽  
Diamond Films ◽  
Ultrananocrystalline Diamond

scholarly journals Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies

2021 ◽  
Vol 56 (12) ◽  
pp. 7171-7230
Author(s):  
Orlando Auciello ◽  
Dean M. Aslam
Keyword(s):  
Materials Science ◽  
Positive Impact ◽  
Diamond Films ◽  
Energy Generation ◽  
Nanoelectromechanical Systems ◽  
Environmental Sensors ◽  
Implantable Biosensors ◽  
Ultrananocrystalline Diamond ◽  
Film Synthesis ◽  
New Generation

AbstractA comprehensive review is presented on the advances achieved in past years on fundamental and applied materials science of diamond films and engineering to integrate them into new generations of microelectromechanical system (MEMS) and nanoelectromechanical systems (NEMS). Specifically, the review focuses on describing the fundamental science performed to develop thin film synthesis processes and the characterization of chemical, mechanical, tribological and electronic properties of microcrystalline diamond, nanocrystalline diamond and ultrananocrystalline diamond films technologies, and the research and development focused on the integration of the diamond films with other film-based materials. The review includes both theoretical and experimental work focused on optimizing the films synthesis and the resulting properties to achieve the best possible MEMS/NEMS devices performance to produce new generation of MEMS/NEMS external environmental sensors and energy generation devices, human body implantable biosensors and energy generation devices, electron field emission devices and many more MEMS/NEMS devices, to produce transformational positive impact on the way and quality of life of people worldwide.

A novel growth model for depositing ultrananocrystalline diamond films in CH4/H2 chemistry

2021 ◽  
pp. 127280
Author(s):  
Qiang Lin ◽  
Sulin Chen ◽  
Zhe Ji ◽  
Zhewei Huang ◽  
Zhinan Zhang ◽  
...  
Keyword(s):  
Growth Model ◽  
Diamond Films ◽  
Ultrananocrystalline Diamond

Optical and mechanical characterization of ultrananocrystalline diamond films prepared in dual frequency discharges

2010 ◽  
Vol 204 (12-13) ◽  
pp. 1997-2001 ◽  
Author(s):  
Monika Karásková ◽  
Lenka Zajíčková ◽  
Vilma Buršíková ◽  
Daniel Franta ◽  
David Nečas ◽  
...  
Keyword(s):  
Mechanical Characterization ◽  
Diamond Films ◽  
Dual Frequency ◽  
Ultrananocrystalline Diamond

Nanoscale investigation of improved triboelectric properties of UV-irradiated ultrananocrystalline diamond films

Nanoscale ◽  
2019 ◽  
Vol 11 (13) ◽  
pp. 6120-6128 ◽  
Author(s):  
Jae-Eun Kim ◽  
Kalpataru Panda ◽  
Joong Il Jake Choi ◽  
Jeong Young Park
Keyword(s):  
Diamond Films ◽  
Uv Exposure ◽  
Ultrananocrystalline Diamond

The improved triboelectrical properties after UV exposure on UNCD films were investigated using AFM.

Attempts to p-Dope Ultrananocrystalline Diamond Films in a Hot Filament Reactor

2006 ◽  
Vol 956 ◽  
Author(s):  
Paul William May ◽  
Matthew Hannaway
Keyword(s):  
Vapour Deposition ◽  
Film Growth ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapour ◽  
Grain Sizes ◽  
Ultrananocrystalline Diamond ◽  
The Individual ◽  
P Type ◽  
Hot Filament

ABSTRACTUltrananocrystalline diamond (UNCD) films have been deposited using hot filament chemical vapour deposition using Ar/CH4/H2 gas mixtures plus additions of B2H6 in an attempt to make p-type semiconducting films. With increasing additions of B2H6 from 0 to 40,000 ppm with respect to C, the film growth rate was found to decrease substantially, whilst the individual grain sizes increased from nm to μm. With 40,000 ppm of B2H6, crystals of boric oxide were found on the substrate surface, which slowly hydrolysed to boric acid on exposure to air. These results are rationalised using a model for UNCD growth based on competition for surface radical sites between CH3 and C atoms.

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