scholarly journals Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots

2006 ◽  
Vol 74 (20) ◽  
Author(s):  
Gustavo A. Narvaez ◽  
Gabriel Bester ◽  
Alberto Franceschetti ◽  
Alex Zunger
2004 ◽  
Vol 818 ◽  
Author(s):  
Vladimir A. Fonoberov ◽  
Alexander A. Balandin

AbstractWe have investigated exciton states in wurtzite GaN/AlN and ZnO quantum dots. A strong piezoelectric field in GaN/AlN quantum dots is found to tilt conduction and valence bands, thus pushing the electron to the top and the hole to the bottom of the GaN/AlN quantum dot. As a result, the exciton ground state energy in GaN/AlN quantum dots with heights larger than 3 nm exhibits a red shift with respect to bulk GaN energy gap. It is shown that the radiative decay time in GaN/AlN quantum dots is large and increases from 0.3 ns for quantum dots with height 1.5 nm to 1.1×103 ns for the quantum dots with height 4.5 nm. On the contrary, the electron and the hole are not separated in ZnO quantum dots. Moreover, a relatively thick “dead layer” is formed near the surface of ZnO quantum dots. As a result, the radiative decay time in ZnO quantum dots is small and decreases from 73 ps for quantum dots with diameter 1.5 nm to 29 ps for the quantum dots with diameter 6 nm.


2018 ◽  
Vol 50 (2) ◽  
Author(s):  
Abdelnasser Aboulfotouh ◽  
Mohamed Fikry ◽  
Mona Mohamed ◽  
Magdy Omar ◽  
Hossam Rady ◽  
...  

2002 ◽  
Vol 737 ◽  
Author(s):  
Bernard Gil ◽  
Alexey V. Kavokin

ABSTRACTWe investigate the strength of the coupling of the electronic states with the electromagnetic field in semiconductor nanospheres, taking into account the retardation effect. We show that the coupling strength is particularly strong: the bulk properties are so enhanced that the radiative decay time can reach some 30 picoseconds for quantum dots sizes of some 30 nm.


2003 ◽  
Vol 83 (5) ◽  
pp. 984-986 ◽  
Author(s):  
S. Kako ◽  
M. Miyamura ◽  
K. Tachibana ◽  
K. Hoshino ◽  
Y. Arakawa

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  

2010 ◽  
Vol 43 (4) ◽  
pp. 045303 ◽  
Author(s):  
P F Gomes ◽  
M P F de Godoy ◽  
G O Dias ◽  
F Iikawa ◽  
M J S P Brasil ◽  
...  

2004 ◽  
Vol 51 (16-18) ◽  
pp. 2493-2501 ◽  
Author(s):  
Jia-Yu Zhang ◽  
Xiao-Yong Wang ◽  
Yong-Hong Ye ◽  
Min Xiao

Nano Letters ◽  
2014 ◽  
Vol 14 (9) ◽  
pp. 5323-5328 ◽  
Author(s):  
Shengye Jin ◽  
Rachel D. Harris ◽  
Bryan Lau ◽  
Kenneth O. Aruda ◽  
Victor A. Amin ◽  
...  

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