Formation energies, binding energies, structure, and electronic transitions of Si divacancies studied by density functional calculations

2006 ◽  
Vol 74 (20) ◽  
Author(s):  
R. R. Wixom ◽  
A. F. Wright
2013 ◽  
Vol 1540 ◽  
Author(s):  
Fleur Legrain ◽  
Oleksandr I. Malyi ◽  
Teck L. Tan ◽  
Sergei Manzhos

ABSTRACTWe show in a theoretical density functional theory study that amorphous Si (a-Si) has more favorable energetics for Mg storage compared to crystalline Si (c-Si). Specifically, Mg and Li insertion is compared in a model a-Si simulation cell. Multiple sites for Mg insertion with a wide range of binding energies are identified. For many sites, Mg defect formation energies are negative, whereas they are positive in c-Si. Moreover, while clustering in c-Si destabilizes the insertion sites (by about 0.1/0.2 eV per atom for nearest-neighbor Li/Mg), it is found to stabilize some of the insertion sites for both Li (by up to 0.27 eV) and Mg (by up to 0.35 eV) in a-Si. This could have significant implications on the performance of Si anodes in Mg batteries.


2009 ◽  
Vol 158 (1-3) ◽  
pp. 13-18 ◽  
Author(s):  
J.R. Grandusky ◽  
V. Jindal ◽  
J.E. Raynolds ◽  
S. Guha ◽  
F. Shahedipour-Sandvik

2006 ◽  
Vol 124 (16) ◽  
pp. 164105 ◽  
Author(s):  
Aaron Puzder ◽  
Maxime Dion ◽  
David C. Langreth

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