scholarly journals High dielectric constant and wide band gap inverse silver oxide phases of the ordered ternary alloys ofSiO2,GeO2, andSnO2

2006 ◽  
Vol 74 (19) ◽  
Author(s):  
C. Sevik ◽  
C. Bulutay
Keyword(s):  
Dielectric Constant ◽  
Band Gap ◽  
High Dielectric Constant ◽  
Silver Oxide ◽  
Wide Band ◽  
Ternary Alloys ◽  
Wide Band Gap ◽  
Oxide Phases ◽  
High Dielectric

scholarly journals Utilizing Wide Band Gap, High Dielectric Constant Nanoparticles as Additives in Organic Solar Cells

2015 ◽  
Vol 119 (42) ◽  
pp. 23883-23889 ◽  
Author(s):  
Ryan S. Gebhardt ◽  
Pengfei Du ◽  
Akshit Peer ◽  
Mitch Rock ◽  
Michael R. Kessler ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solar Cells ◽  
Band Gap ◽  
Organic Solar Cells ◽  
High Dielectric Constant ◽  
Wide Band ◽  
Wide Band Gap ◽  
High Dielectric

Optical properties and band gap characterization of high dielectric constant oxides

2012 ◽  
Vol 520 (14) ◽  
pp. 4532-4535 ◽  
Author(s):  
O. Fursenko ◽  
J. Bauer ◽  
G. Lupina ◽  
P. Dudek ◽  
M. Lukosius ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Optical Properties ◽  
Band Gap ◽  
High Dielectric Constant ◽  
High Dielectric

scholarly journals Fabrication of wide-band-gap MgxZn1−xO quasi-ternary alloys by molecular-beam epitaxy

2005 ◽  
Vol 86 (19) ◽  
pp. 192911 ◽  
Author(s):  
Hiroshi Tanaka ◽  
Shigeo Fujita ◽  
Shizuo Fujita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Wide Band ◽  
Ternary Alloys ◽  
Wide Band Gap

Synthesis and investigation into the structural, electronic and electrical properties of K2Pb(OCN)I3

2019 ◽  
Vol 48 (36) ◽  
pp. 13813-13819
Author(s):  
Amira Siai ◽  
Alexandru Oprea ◽  
Markus Ströbele ◽  
Hans-Jürgen Meyer
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Electrical Properties ◽  
Band Gap ◽  
Solid State Reaction ◽  
High Dielectric Constant ◽  
Compound K ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Dielectric

The new compound K2Pb(OCN)I3 was synthesized by the solid-state reaction of PbI2 and KOCN. Built-up form two interpenetrating tetrahedral-octahedral frameworks, it is a direct band-gap semiconductor (2.4 eV) with rather high dielectric constant.

Wide band gaps and low-loss waveguiding in ceramic high dielectric constant photonic crystals

2007 ◽  
Vol 102 (9) ◽  
pp. 094106 ◽  
Author(s):  
R. Meisels ◽  
P. Oberhumer ◽  
F. Kuchar ◽  
F. Aldrian ◽  
R. Gajic
Keyword(s):  
Dielectric Constant ◽  
Photonic Crystals ◽  
High Dielectric Constant ◽  
Wide Band ◽  
Band Gaps ◽  
Low Loss ◽  
High Dielectric

The Structures and Electronic Properties of Composite Material (LaxAl1-X)2O3 from First-Principles Study

2012 ◽  
Vol 583 ◽  
pp. 158-161
Author(s):  
Hui Yu Yan ◽  
Yan Rui Guo ◽  
Qing Gong Song
Keyword(s):  
Dielectric Constant ◽  
Composite Material ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Calculation Method ◽  
High Dielectric Constant ◽  
First Principles Calculation ◽  
Al Content ◽  
High Dielectric

The structures and electronic properties of (LaxAl1-x)2O3 are studied by first-principles calculation method. The results show that the composite material (LaxAl1-x)2O3 tend to be in sixfold-coordinated structure when x0.7. (LaxAl1-x)2O3 is in disorder structure and get the minimum band gap when x equals about 0.7. It suggest that (LaxAl1-x)2O3 can be synthesized as high dielectric constant material by doping La2O3 with a lower Al dopant concentrations or by fabricating (LaxAl1-x)2O3 with rich Al content.

scholarly journals Structures and characteristics of atomically thin ZrO2 from monolayer to bilayer and two-dimensional ZrO2–MoS2 heterojunction

RSC Advances ◽  
2019 ◽  
Vol 9 (57) ◽  
pp. 32984-32994 ◽  
Author(s):  
Junhui Weng ◽  
Shang-Peng Gao
Keyword(s):  
Dielectric Constant ◽  
Band Gap ◽  
Structural Stability ◽  
Dielectric Layer ◽  
High Dielectric Constant ◽  
Two Dimensional ◽  
High Dielectric

The ultrathin ZrO2 dielectric layer reveals structural stability in contrast to its bulk form, large band gap and high dielectric constant.

FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS

2011 ◽  
Vol 25 (02) ◽  
pp. 77-88 ◽  
Author(s):  
H. J. QUAH ◽  
K. Y. CHEONG ◽  
Z. HASSAN
Keyword(s):  
Gallium Nitride ◽  
Band Gap ◽  
High Power ◽  
Gate Dielectric ◽  
Wide Band ◽  
Power Devices ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
High Dielectric ◽  
Hostile Environments

Recent advances in silicon technology have pushed the silicon properties to its theoretical limits. Therefore, wide band gap semiconductors, such as silicon carbide ( SiC ) and gallium nitride ( GaN ) have been considered as a replacement for silicon. The discovery of these wide band gap semiconductors have given the new generation power devices a magnificent prospect of surviving under high temperature and hostile environments. The primary focuses of this review are the properties of GaN , the alternative substrates that can be used to deposit GaN and the substitution of SiO 2 gate dielectric with high dielectric constant (k) film. The future perspectives of AlGaN / GaN heterostructures are also discussed, providing that these structures are able to further enhance the performance of high power devices.

Spin-flip Raman scattering of wide-band-gap II-VI ternary alloys

1999 ◽  
Vol 60 (19) ◽  
pp. 13555-13560 ◽  
Author(s):  
D. Wolverson ◽  
J. J. Davies ◽  
C. L. Orange ◽  
K. Ogata ◽  
Sz. Fujita ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Band Gap ◽  
Wide Band ◽  
Ternary Alloys ◽  
Wide Band Gap ◽  
Spin Flip
Sign in / Sign up

Export Citation Format

Share Document