scholarly journals Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures

2006 ◽  
Vol 74 (11) ◽  
Author(s):  
K. M. Indlekofer ◽  
J. Knoch ◽  
J. Appenzeller
2013 ◽  
Vol 850-851 ◽  
pp. 3-6
Author(s):  
Chao Wang ◽  
Rong Sheng Cai ◽  
Fei Yu Diao ◽  
Lu Yuan ◽  
Guang Wen Zhou ◽  
...  

One-dimensional nanostructures exhibit interesting electronic and optical properties due to their low dimensionality leading to quantum confinement effects. ZnO has received lot of attention as a nanostructured material because of unique properties rendering it suitable for various applications. In this paper, ZnO nanowires are synthesized in large quantity through thermal oxidation of brass (Cu0.7Zn0.3alloy). The epitaxial relationship between the brass substrates and ZnO layer and the epitaxial relationship between the ZnO nanowire and ZnO layer have been examined.


2015 ◽  
Vol 19 (6) ◽  
pp. 484-497 ◽  
Author(s):  
Chuang Han ◽  
Siqi Liu ◽  
Zi-Rong Tang ◽  
Yi-Jun Xu

2021 ◽  
Author(s):  
Lei Jin ◽  
Nerea Bilbao ◽  
Yang Lv ◽  
Xiao-Ye Wang ◽  
Soltani Paniz ◽  
...  

Graphene nanoribbons (GNRs), quasi-one-dimensional strips of graphene, exhibit a nonzero bandgap due to quantum confinement and edge effects. In the past decade, different types of GNRs with atomically precise structures...


2014 ◽  
Vol 250 ◽  
pp. 148-156 ◽  
Author(s):  
Xiaomin Guo ◽  
Xiangting Dong ◽  
Jinxian Wang ◽  
Wensheng Yu ◽  
Guixia Liu

1998 ◽  
Vol 545 ◽  
Author(s):  
X. Sun ◽  
Z. Zhang ◽  
G. Dresselhaus ◽  
M. S. Dresselhaus ◽  
J. Y. Ying ◽  
...  

AbstractBismuth as a semimetal is not a good thermoelectric material in bulk form because of the approximate cancellation between the electron and hole contributions. However, quantum confinement can be introduced by making Bi nanowires to move the lowest conduction subband edge up and the highest valence subband edge down to get a one-dimensional (1D) semiconductor at some critical wire diameter dc. A theoretical model based on the basic band structure of bulk Bi is developed to predict the dependence of these quantities on wire diameter and on the crystalline orientation of the bismuth nanowires. Numerical modeling is performed for trigonal, binary and bisectrix crystal orientations. By carefully tailoring the Bi wire diameter and carrier concentration, substantial enhancement in the thermoelectric figure of merit is expected for small nanowire diameters.


2010 ◽  
Vol 13 (7) ◽  
pp. B69 ◽  
Author(s):  
Christiane de Arruda Rodrigues ◽  
Norma R. de Tacconi ◽  
Wilaiwan Chanmanee ◽  
Krishnan Rajeshwar

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