Optical properties ofCdSe∕MgSmonolayer quantum wells and self-assembled quantum dots

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
M. Funato ◽  
K. Omae ◽  
Y. Kawakami ◽  
Sg. Fujita ◽  
C. Bradford ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Wells ◽  
Self Assembled

Electrical and optical properties of self-assembled InAs quantum dots in InP studied by space-charge spectroscopy and photoluminescence

2000 ◽  
Vol 61 (7) ◽  
pp. 4795-4800 ◽  
Author(s):  
H. Pettersson ◽  
C. Pryor ◽  
L. Landin ◽  
M.-E. Pistol ◽  
N. Carlsson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Space Charge ◽  
Electrical And Optical Properties ◽  
Inas Quantum Dots ◽  
Self Assembled

Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

2011 ◽  
Author(s):  
Pengyu Wang ◽  
Qi Wang ◽  
Xin Guo ◽  
Zhigang Jia ◽  
Tianhe Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Self Assembled

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

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