Indium incorporation in In-richInxGa1−xAs∕GaAslayers grown by low-pressure metalorganic vapor-phase epitaxy and its influence on the growth of self-assembled quantum dots
Keyword(s):
2000 ◽
Vol 221
(1-4)
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pp. 599-604
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Keyword(s):
1998 ◽
Vol 195
(1-4)
◽
pp. 524-529
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Keyword(s):
Keyword(s):
Self-assembled InGaN quantum dots on GaN emitting at 520nm grown by metalorganic vapor-phase epitaxy
2008 ◽
Vol 310
(7-9)
◽
pp. 2320-2325
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Keyword(s):
2011 ◽
Vol 50
(9)
◽
pp. 095502
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Keyword(s):
2019 ◽
Vol 509
◽
pp. 133-140
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