scholarly journals Spin-photovoltaic effect in quantum wires due to intersubband transitions

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
Arkady Fedorov ◽  
Yuriy V. Pershin ◽  
Carlo Piermarocchi
Keyword(s):  
Quantum Wires ◽  
Photovoltaic Effect ◽  
Intersubband Transitions

Observation of photoinduced intersubband transitions in one-dimensional semiconductor quantum wires

2000 ◽  
Vol 62 (15) ◽  
pp. 9935-9938 ◽  
Author(s):  
S. Calderon ◽  
O. Kadar ◽  
A. Sa’ar ◽  
A. Rudra ◽  
E. Martinet ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Intersubband Transitions ◽  
One Dimensional

Absorption and Emission of Light in Quantum Structures

2020 ◽  
pp. 343-418
Author(s):  
Vurgaftman Igor
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Quantum Wires ◽  
Incident Light ◽  
Optical Gain ◽  
Two Dimensional ◽  
Intersubband Transitions ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Two Dimensional Materials

This chapter shows how to calculate the absorption coefficient, optical gain, and radiative recombination rates in quantum wells and superlattices. A detailed treatment of both interband and intersubband transitions is presented, and their differences and similarities are considered in detail. The optical properties of wurtzite quantum wells and zinc-blende quantum wires and dots are also discussed. Finally, the interaction of excitonic transitions with incident light in quantum wells is considered as a model for other two-dimensional materials.

SPIN-PHOTOVOLTAIC EFFECT IN QUANTUM WIRES

2008 ◽  
Author(s):  
A. FEDOROV ◽  
YU. V. PERSHIN ◽  
C. PIERMAROCCHI
Keyword(s):  
Quantum Wires ◽  
Photovoltaic Effect

POLAR-OPTICAL PHONON-LIMITED ELECTRON MOBILITY IN QUANTUM WIRES

2006 ◽  
Vol 20 (21) ◽  
pp. 3015-3025 ◽  
Author(s):  
ARSHAK L. VARTANIAN
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Dielectric Medium ◽  
Polar Optical Phonon ◽  
Wire Radius ◽  
Phonon Confinement ◽  
Intersubband Transitions ◽  
Low Field

The electron mobility conditioned by confined and interface polar-optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method which was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the Cd 0.35 Zn 0.65 Se quantum wire embedded in the CdZn dielectric medium is estimated. The extremums on the mobility dependences on wire radius and Cd concentration are obtained.

The photovoltaic effect in non-uniform quantum wires

1993 ◽  
Vol 5 (33) ◽  
pp. 6091-6097 ◽  
Author(s):  
L Fedichkin ◽  
V Ryzhii ◽  
V V'yurkov
Keyword(s):  
Quantum Wires ◽  
Photovoltaic Effect ◽  
Uniform Quantum

Depolarization blueshift in intersubband transitions of triangular quantum wires

2009 ◽  
Vol 106 (11) ◽  
pp. 113712 ◽  
Author(s):  
B. Zhang ◽  
Y. W. Lu ◽  
H. P. Song ◽  
X. L. Liu ◽  
S. Y. Yang ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Intersubband Transitions

scholarly journals Spin photovoltaic effect in quantum wires with Rashba interaction

2005 ◽  
Vol 86 (21) ◽  
pp. 212107 ◽  
Author(s):  
Yuriy V. Pershin ◽  
Carlo Piermarocchi
Keyword(s):  
Quantum Wires ◽  
Photovoltaic Effect ◽  
Rashba Interaction

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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