scholarly journals Electronic properties ofEuB6in the ferromagnetic regime: Half-metal versus semiconductor

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
M. Kreissl ◽  
W. Nolting
Keyword(s):  
Electronic Properties ◽  
Half Metal ◽  
Versus Semiconductor

scholarly journals Chemical functionalization of the ZnO monolayer: structural and electronic properties

RSC Advances ◽  
2019 ◽  
Vol 9 (38) ◽  
pp. 21831-21843 ◽  
Author(s):  
Lanli Chen ◽  
Yuanyuan Cui ◽  
Zhihua Xiong ◽  
Mingbin Zhou ◽  
Yanfeng Gao
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Magnetic Semiconductor ◽  
Nonmagnetic Metal ◽  
Chemical Functionalization ◽  
Half Metal ◽  
Structural And Electronic Properties

After hydrogenation or fluorination, the band gap of the ZnO monolayer can be effectively modulated, and a nonmagnetic metal or magnetic half-metal → non-magnetic semiconductor transition can be achieved.

scholarly journals Transport, optical and electronic properties of the half metal CrO2

1999 ◽  
Vol 85 (8) ◽  
pp. 6220-6222 ◽  
Author(s):  
I. I. Mazin ◽  
D. J. Singh ◽  
Claudia Ambrosch-Draxl
Keyword(s):  
Electronic Properties ◽  
Half Metal ◽  
Optical And Electronic Properties

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties

The electronic properties of a radical cation salt of bis-ethylenedioxodibenzofuran, [(bEDODBF)5 (AsF6)2(CH2Cl 2)0.2]

1988 ◽  
Vol 49 (4) ◽  
pp. 667-673 ◽  
Author(s):  
S. Söderholm ◽  
J. Hellberg ◽  
G. Ahlgren ◽  
M. Krebs ◽  
J.U. von Schütz ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Radical Cation ◽  
Radical Cation Salt

Electronic properties of TTF-TCNQ : a connection between theory and experiment

1978 ◽  
Vol 39 (12) ◽  
pp. 1355-1363 ◽  
Author(s):  
L.G. Caron ◽  
M. Miljak ◽  
D. Jerome
Keyword(s):  
Electronic Properties ◽  
Theory And Experiment
Sign in / Sign up

Export Citation Format

Share Document