Ripple pattern formation on silicon surfaces by low-energy ion-beam erosion: Experiment and theory

2005 ◽  
Vol 72 (23) ◽  
Author(s):  
B. Ziberi ◽  
F. Frost ◽  
Th. Höche ◽  
B. Rauschenbach
2011 ◽  
Vol 11 (2) ◽  
pp. 1068-1073
Author(s):  
Shahjada A. Pahlovy ◽  
Kazuma Yanagimoto ◽  
Iwao Miyamoto

2002 ◽  
Vol 13 (3) ◽  
pp. 304-308 ◽  
Author(s):  
R Gago ◽  
L Vázquez ◽  
R Cuerno ◽  
M Varela ◽  
C Ballesteros ◽  
...  

2004 ◽  
Vol 849 ◽  
Author(s):  
B. Ziberi ◽  
F. Frost ◽  
T. Höche ◽  
B. Rauschenbach

ABSTRACTExperimental studies of low-energy (≤ 2000 eV) Ar+ ion beam erosion of Si surfaces under normal and oblique ion incidence with simultaneous sample rotation at room temperature show a variety of topographies. At oblique ion incidence, between 70° and 80° with respect to surface normal, dot patterns evolve (dot size ∼ 30 nm) with a remarkably high degree of ordering comparable to dot nanostructures reported for different III/V compound semiconductors. The mean size and ordering of these nanostructures can be adjusted by various process parameters like ion beam energy and erosion time, respectively. Scanning force microscopy (AFM) has been used to characterize the evolution of the surface topography.


2009 ◽  
Vol 1181 ◽  
Author(s):  
Jens Völlner ◽  
Bashkim Ziberi ◽  
Frank Frost ◽  
Bernd Rauschenbach

AbstractRipple formation and smoothing of pre-patterned fused silica surfaces by low-energy ion beam erosion have been investigated. As pre-pattern ripple surfaces produced by low-energy Ar+ ion beam erosion were used. In addition to the enhanced ripple formation on the pre-patterned surfaces also the smoothing characteristics of surface is changed. Due to the anisotropic surface roughness of the ripple pattern the irradiation direction with respect to the pre-pattern becomes important. It is suggested that all of these effects are related to surface gradient dependent sputtering and therefore it is an important mechanisms also in the low-energy ion beam erosion of fused silica surfaces.


1983 ◽  
Vol 25 ◽  
Author(s):  
A. Climent ◽  
J.-S. Wang ◽  
S. J. Fonash

ABSTRACTThe dry etching technologies reactive ion etching (RIE) and ion beam etching (IBE) have both been shown to cause a damaged layer at silicon surfaces. It has been demonstrated that this damage can be annealed out or, alternatively, it can be passivated with low energy hydrogen implants from a Kaufman ion source. This study further explores the hydrogen passivation approach by focusing on the effect of hydrogen implantation on damage caused by argon ion beam etching. The lighter hydrogen ions are actually shown ta cause more extensive damage than the heavier argon ions. However, by using low-energy hydrogen implants all damage, that present from the Ar and that generated during the hydrogen implant, can be passivated.


2013 ◽  
Vol 15 (10) ◽  
pp. 103029 ◽  
Author(s):  
Marc Teichmann ◽  
Jan Lorbeer ◽  
Bashkim Ziberi ◽  
Frank Frost ◽  
Bernd Rauschenbach

2013 ◽  
Vol 552 ◽  
pp. 238-243
Author(s):  
Zhi Chao Wang ◽  
Hua Dong Yu ◽  
Da Seng Wang ◽  
Chun Yang Wang

Ultra-smooth optical surfaces are very important in widely fields. They’re not only used in optics, but also in the electronics. Ultra-smooth surfaces are difficult to process, because the rms is less than 1nm. The process methods have Teflon Polishing, Float Polishing (FP), Magnetorheological Finishing (MRF) and Ion Beam Figuring (IBF) etc. Compared with conventional polishing, IBF have higher processing quality and efficiency. Low-energy (<2Kev) IBF can form the self-organized nanopatterns on optical surfaces. Since IBF is a non-contact method; there is no edge effect during the process. We can change the ion beam parameters to get dot or ripple pattern on substrate. Only the self-organized ripple pattern is discussed in the paper. For the prediction of process parameters, the principle theories Sigmund theory and BH model are used the interplay between the angle of ion beam incidence, ion flux, incident energy and substrate temperature leads to the self-assembly, which are considered by these theory. In this paper the angle of incidence and incident energy are mainly researched on. Processing nanopatterns on Si has been simulated by SRIM program with these theory and the results reveal several laws in the process. It is believed that these laws will help us to well predict the ion beam parameters and lead IBE experiments.


1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).


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