scholarly journals Electronic structure and spontaneous internal field around nonmagnetic impurities in spin-triplet chiralp-wave superconductors

2005 ◽  
Vol 72 (22) ◽  
Author(s):  
Mitsuaki Takigawa ◽  
Masanori Ichioka ◽  
Kazuhiko Kuroki ◽  
Yukio Tanaka
Keyword(s):  
Electronic Structure ◽  
Internal Field ◽  
Nonmagnetic Impurities ◽  
Spin Triplet

Electronic Structure of Two Sulphur-Related Bound Excitions in Silicon Studied by Optical Detection of Magnetic Resonance

1989 ◽  
Vol 163 ◽  
Author(s):  
W.M. Chen ◽  
A. Henry ◽  
E. Janzén ◽  
B. Monemar ◽  
M.L.W. Thewalt
Keyword(s):  
Electronic Structure ◽  
Magnetic Resonance ◽  
Optical Detection ◽  
Magnetic Interaction ◽  
Complex Model ◽  
Critical Test ◽  
Weak Anisotropy ◽  
Single Defect ◽  
Spin Triplet

AbstractWe report an investigation on the electronic structure of two bound exciton (BE) systems from a complex defect in S-doped Si, by optical detection of magnetic resonance (ODMR). A spin-triplet (S=1) is identified to be the lowest electronic state of the BE's, which gives rise to deep photoluminescence (PL) emissions when recombining. A weak anisotropy of the magnetic interaction of the BE’s (not possible to resolve in Zeeman data) is revealed, which leads directly to the determination of the symmetry for the excited state of the defect. A S-related complex model is suggested as the identity of the defect. A critical test of two possible metastable configurations of the constituents of a single defect is undertaken.

ELECTRONIC STRUCTURE OF VORTICES IN HIGH Tc SUPERCONDUCTORS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3478-3481 ◽  
Author(s):  
S. E. BARNES
Keyword(s):  
Electronic Structure ◽  
Chemical Potential ◽  
Numerical Comparison ◽  
High Tc Superconductors ◽  
High Tc ◽  
Spin Triplet

The formation of a pseudo gap and supercondctivity are described in terms of a Kondo band formed at the chemical potential. Pre-existing spin triplet bosons condense at Tc. For T>Tc or at the center of a vortex the condensate is absent and these bosons lead to a pseudo gap. Numerical comparison is made with STM results.

THE DESTABILIZATION OF ZHANG-RICE SINGLET DUE TO THE p-p-TRANSFER IN COPPER OXIDES

1991 ◽  
Vol 05 (07) ◽  
pp. 531-533 ◽  
Author(s):  
S.G. OVCHINNIKOV
Keyword(s):  
Electronic Structure ◽  
Triplet State ◽  
Singlet State ◽  
Exact Diagonalization ◽  
Copper Oxides ◽  
Spin Singlet ◽  
Atomic Limit ◽  
Spin Triplet

An exact diagonalization of the CuO 4 cluster multielectron Hamiltonian is carried out in the atomic limit U d =U p =∞. The Zhang-Rice spin singlet state of two holes becomes unstable when t pp is growing due to crossover with a spin triplet state. It results in a multiband electronic structure of copper oxides.

EELS Measurement of the Local Electronic Structure of Copper Atoms Segregated to Aluminum Grain Boundaries

1996 ◽  
Vol 54 ◽  
pp. 342-343
Author(s):  
S.J. Splinter ◽  
J. Bruley ◽  
P.E. Batson ◽  
D.A. Smith ◽  
R. Rosenberg
Keyword(s):  
Electronic Structure ◽  
Grain Boundaries ◽  
Boundary Segregation ◽  
Thin Layers ◽  
Nominal Composition ◽  
Spatially Resolved ◽  
Service Lifetime ◽  
Heat Treated ◽  
Probe Size ◽  
Local Electronic Structure

It has long been known that the addition of Cu to Al interconnects improves the resistance to electromigration failure. It is generally accepted that this improvement is the result of Cu segregation to Al grain boundaries. The exact mechanism by which segregated Cu increases service lifetime is not understood, although it has been suggested that the formation of thin layers of θ-CuA12 (or some metastable substoichiometric precursor, θ’ or θ”) at the boundaries may be necessary. This paper reports measurements of the local electronic structure of Cu atoms segregated to Al grain boundaries using spatially resolved EELS in a UHV STEM. It is shown that segregated Cu exists in a chemical environment similar to that of Cu atoms in bulk θ-phase precipitates.Films of 100 nm thickness and nominal composition Al-2.5wt%Cu were deposited by sputtering from alloy targets onto NaCl substrates. The samples were solution heat treated at 748K for 30 min and aged at 523K for 4 h to promote equilibrium grain boundary segregation. EELS measurements were made using a Gatan 666 PEELS spectrometer interfaced to a VG HB501 STEM operating at 100 keV. The probe size was estimated to be 1 nm FWHM. Grain boundaries with the narrowest projected width were chosen for analysis. EDX measurements of Cu segregation were made using a VG HB603 STEM.

Electronic structure studies of conducting polymers by electron energy-loss spectroscopy

1996 ◽  
Vol 54 ◽  
pp. 160-161
Author(s):  
J. Fink
Keyword(s):  
Electronic Structure ◽  
Conducting Polymers ◽  
Conjugated Polymers ◽  
Electron Acceptors ◽  
Electron Donors ◽  
Light Emitting ◽  
One Dimensional ◽  
New Class ◽  
Electrical Conductivities ◽  
Electron Energy Loss

Conducting polymers comprises a new class of materials achieving electrical conductivities which rival those of the best metals. The parent compounds (conjugated polymers) are quasi-one-dimensional semiconductors. These polymers can be doped by electron acceptors or electron donors. The prototype of these materials is polyacetylene (PA). There are various other conjugated polymers such as polyparaphenylene, polyphenylenevinylene, polypoyrrole or polythiophene. The doped systems, i.e. the conducting polymers, have intersting potential technological applications such as replacement of conventional metals in electronic shielding and antistatic equipment, rechargable batteries, and flexible light emitting diodes.Although these systems have been investigated almost 20 years, the electronic structure of the doped metallic systems is not clear and even the reason for the gap in undoped semiconducting systems is under discussion.

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