Domain-wall resonance induced by spin-polarized current in metal thin films with stripe structures

2005 ◽  
Vol 72 (17) ◽  
Author(s):  
Peng-Bin He ◽  
X. C. Xie ◽  
W. M. Liu
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Metal Thin Films ◽  
Spin Polarized ◽  
Domain Wall Resonance

A micromagnetic model domain wall resonance in thin films

1999 ◽  
Vol 35 (5) ◽  
pp. 3790-3792 ◽  
Author(s):  
G.M. Moore ◽  
R.L. Stamps ◽  
R. Street
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Model Domain ◽  
Domain Wall Resonance

scholarly journals Spin-polarized current effects in disordered La0.7Ba0.3MnO3half-metal thin films

2010 ◽  
Vol 43 (24) ◽  
pp. 245001 ◽  
Author(s):  
C Barone ◽  
C Aruta ◽  
A Galdi ◽  
P Orgiani ◽  
O Quaranta ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Spin Polarized

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

Laser-Direct Patterning of Nanostructured Metal Thin Films

2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee
Keyword(s):  
Thin Films ◽  
Metal Thin Films ◽  
Direct Patterning ◽  
Nanostructured Metal

scholarly journals Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
E. K. Petrov ◽  
V. N. Men'shov ◽  
I. P. Rusinov ◽  
M. Hoffmann ◽  
A. Ernst ◽  
...  
Keyword(s):  
Domain Wall ◽  
Topological Insulators ◽  
Flat Bands ◽  
Spin Polarized

scholarly journals Nanoscale Transition Metal Thin Films: Growth Characteristics and Scaling Law for Interlayer Formation

2019 ◽  
Vol 11 (49) ◽  
pp. 46311-46326 ◽  
Author(s):  
Anirudhan Chandrasekaran ◽  
Robbert W. E. van de Kruijs ◽  
Jacobus M. Sturm ◽  
Andrey A. Zameshin ◽  
Fred Bijkerk
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Scaling Law ◽  
Growth Characteristics ◽  
Metal Thin Films

Fabrication of nanoporous noble metal thin films by O 2 plasma dealloying

2017 ◽  
Vol 631 ◽  
pp. 147-151 ◽  
Author(s):  
Geun-Hyuk Lee ◽  
Sehoon An ◽  
Seong Woo Jang ◽  
Sehoon Hwang ◽  
Sang Ho Lim ◽  
...  
Keyword(s):  
Thin Films ◽  
Noble Metal ◽  
Metal Thin Films

The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

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