scholarly journals Time-resolved photoluminescence studies of the energy transfer from excitons confined in Si nanocrystals to oxygen molecules

2005 ◽  
Vol 72 (16) ◽  
Author(s):  
Minoru Fujii ◽  
Dmitri Kovalev ◽  
Bernhard Goller ◽  
Shingo Minobe ◽  
Shinji Hayashi ◽  
...  
2020 ◽  
Author(s):  
Min Zeng ◽  
Federico Locardi ◽  
Dimitrije Mara ◽  
Zeger Hens ◽  
Rik Van Deun ◽  
...  

The accessible emission spectral range of lead halide perovskite (LHP) CsPbX3 (X = Cl−, Br−, I−) nanocrystals (NCs) has remained so far limited to wavelengths below 1 μm, corresponding to the emission line of Yb3+, whereas the direct sensitization of other near-infrared (NIR) emitting lanthanide ions is unviable. Herein, we present a general strategy to enable intense NIR emission from Er3+ at ~1.5 μm, Ho3+ at ~1.0 μm and Nd3+ at ~1.06 μm through a Mn2+-mediated energy-transfer pathway. Steady-state and time-resolved photoluminescence studies show that energy-transfer efficiencies of about 39%, 35% and 70% from Mn2+ to Er3+, Ho3+ and Nd3+ are obtained, leading to photoluminescence quantum yields of ~0.8%, ~0.7% and ~3%, respectively. This work provides guidance on constructing energy-transfer pathways in semiconductors and opens new perspectives for the development of lanthanide-functionalized LHPs as promising materials for optoelectronic devices operating in the NIR region.


2020 ◽  
Author(s):  
Min Zeng ◽  
Federico Locardi ◽  
Dimitrije Mara ◽  
Zeger Hens ◽  
Rik Van Deun ◽  
...  

The accessible emission spectral range of lead halide perovskite (LHP) CsPbX3 (X = Cl−, Br−, I−) nanocrystals (NCs) has remained so far limited to wavelengths below 1 μm, corresponding to the emission line of Yb3+, whereas the direct sensitization of other near-infrared (NIR) emitting lanthanide ions is unviable. Herein, we present a general strategy to enable intense NIR emission from Er3+ at ~1.5 μm, Ho3+ at ~1.0 μm and Nd3+ at ~1.06 μm through a Mn2+-mediated energy-transfer pathway. Steady-state and time-resolved photoluminescence studies show that energy-transfer efficiencies of about 39%, 35% and 70% from Mn2+ to Er3+, Ho3+ and Nd3+ are obtained, leading to photoluminescence quantum yields of ~0.8%, ~0.7% and ~3%, respectively. This work provides guidance on constructing energy-transfer pathways in semiconductors and opens new perspectives for the development of lanthanide-functionalized LHPs as promising materials for optoelectronic devices operating in the NIR region.


2012 ◽  
Vol 3 ◽  
pp. 629-636 ◽  
Author(s):  
Gilad Gotesman ◽  
Rahamim Guliamov ◽  
Ron Naaman

We studied the photoluminescence and time-resolved photoluminescence from self-assembled bilayers of donor and acceptor nanoparticles (NPs) adsorbed on a quartz substrate through organic linkers. Charge and energy transfer processes within the assemblies were investigated as a function of the length of the dithiolated linker (DT) between the donors and acceptors. We found an unusual linker-length-dependency in the emission of the donors. This dependency may be explained by charge and energy transfer processes in the vertical direction (from the donors to the acceptors) that depend strongly on charge transfer processes occurring in the horizontal plane (within the monolayer of the acceptor), namely, parallel to the substrate.


1994 ◽  
Vol 37 (4-6) ◽  
pp. 1133-1136
Author(s):  
C.J. Stevens ◽  
R.A. Taylor ◽  
J.F. Ryan ◽  
M. Dabbicco ◽  
M. Ferrara ◽  
...  

2007 ◽  
Vol 17 (01) ◽  
pp. 179-188 ◽  
Author(s):  
MICHAEL WRABACK ◽  
GREGORY A. GARRETT ◽  
ANAND V. SAMPATH ◽  
PAUL H. SHEN

Time-resolved photoluminescence studies of nitride semiconductors and ultraviolet light emitters comprised of these materials are performed as a function of pump intensity as a means of understanding and evaluating device performance. Comparison of time-resolved photoluminescence (TRPL) on UV LED wafers prior to fabrication with subsequent device testing indicate that the best performance is attained from active regions that exhibit both reduced nonradiative recombination due to saturation of traps associated with point and extended defects and concomitant lowering of radiative lifetime with increasing carrier density. Similar behavior is observed in optically pumped UV lasers. Temperature and intensity dependent TRPL measurements on a new material, AlGaN containing nanoscale compositional inhomogeneities (NCI), show that it inherently combines inhibition of nonradiative recombination with reduction of radiative lifetime, providing a potentially higher efficiency UV emitter active region.


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