scholarly journals On-lattice kinetic Monte Carlo simulations of point defect aggregation in entropically influenced crystalline systems

2005 ◽  
Vol 72 (13) ◽  
Author(s):  
Jianguo Dai ◽  
Joshua M. Kanter ◽  
Sumeet S. Kapur ◽  
Warren D. Seider ◽  
Talid Sinno
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Point Defect ◽  
Kinetic Monte Carlo ◽  
Kinetic Monte Carlo Simulations ◽  
Defect Aggregation

An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon

2007 ◽  
Vol 994 ◽  
Author(s):  
Ning Kong ◽  
Taras A. Kirichenko ◽  
Gyeong S. Hwang ◽  
Foisy C. Mark ◽  
Steven G. H. Anderson ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Point Defect ◽  
Simulation Study ◽  
Kinetic Monte Carlo ◽  
Diffusion Mechanism ◽  
Defect Engineering ◽  
Good Match ◽  
Diffusion Behavior ◽  
Kinetic Monte Carlo Simulations

AbstractWe report that arsenic diffusion can be enhanced and retarded by surrounding interstitial rich and vacancy rich environments created by Si point defect engineering implant. The enhancement and retardation can be attributed to the dominant arsenic interstitial diffusion mechanism during post-implant anneal. Kinetic Monte Carlo simulations with newly implemented models show good match with experiments. Our study suggests the importance of arsenic interstitial mechanism and a possible approach for n-type ultra shallow junction fabrication.

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