Calcium fluoride on Si(001): Adsorption mechanisms and epitaxial growth modes

2005 ◽  
Vol 72 (4) ◽  
Author(s):  
L. Pasquali ◽  
S. M. Suturin ◽  
V. P. Ulin ◽  
N. S. Sokolov ◽  
G. Selvaggi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Calcium Fluoride ◽  
Adsorption Mechanisms ◽  
Growth Modes

Epitaxial Growth of MG on PD(100) and AG(100): Growth Modes for Complete and Incomplete Adlayer Condensation

1997 ◽  
pp. 235-244 ◽  
Author(s):  
J. Wollschläger ◽  
F. Schäfer ◽  
D. Erdös ◽  
K. M. Schröder ◽  
M. Michailov ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Growth Modes

Epitaxial growth modes and interlayer relaxation of thin Cu films grown on Ru(0001) and oxygen-precovered Ru(0001)

1997 ◽  
Vol 387 (1-3) ◽  
pp. L1041-L1050 ◽  
Author(s):  
S.D. Ruebush ◽  
R.E. Couch ◽  
S. Thevuthasan ◽  
Z. Wang ◽  
C.S. Fadley
Keyword(s):  
Epitaxial Growth ◽  
Cu Films ◽  
Growth Modes

Electron Microscope Studies of Some Vapor Deposited Materials: Nucleation, Epitaxial Growth and Surface Topography

1991 ◽  
Vol 237 ◽  
Author(s):  
William Krakow
Keyword(s):  
Electron Microscope ◽  
Epitaxial Growth ◽  
Three Dimensional ◽  
Film Surface ◽  
Ex Situ ◽  
Growth Regime ◽  
Growth Modes ◽  
Transmission Electron ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

ABSTRACTThe nucleation and epitaxial growth of deposits at both low and high temperature substrate conditions and the resulting two and three dimensional growth modes have been investigated using electron diffraction and transmission electron microscopy. At high temperatures, the growth of small particles such as Au, Pt and Ge grown under low rate conditions similar to MBE are revealed by lattice imaging. Using an intermediate bufler layer Ag film, surface growth of (100) and (310) Au thin film layers are revealed by diffraction contrast to be in a step ledge growth regime. While the above investigations were performed ex situ to the microscope vacuum environment, an in situ evaporator has been also been installed on a high resolution electron microscope. Observations can be made in real time of cluster growth from atomic diameters on up. The resulting atomic motion around cluster edges is similar in appearance to surface melting.

scholarly journals Interface chemistry and epitaxial growth modes ofSrF2on Si(001)

2007 ◽  
Vol 75 (7) ◽  
Author(s):  
L. Pasquali ◽  
S. M. Suturin ◽  
A. K. Kaveev ◽  
V. P. Ulin ◽  
N. S. Sokolov ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Interface Chemistry ◽  
Growth Modes

First-Principles Study of SI(lll) Homoepitaxy

1998 ◽  
Vol 538 ◽  
Author(s):  
Kyeongjae Cho ◽  
Efthimios Kaxiras
Keyword(s):  
Epitaxial Growth ◽  
First Principles ◽  
Morphological Evolution ◽  
Cluster Formation ◽  
Growth Conditions ◽  
Growth Modes ◽  
Pseudopotential Calculations ◽  
Step Density ◽  
Formation Energies ◽  
Microscopic Energy

AbstractEpitaxial growth on the Si(111) surface is studied using first-principles total-energy pseudopotential calculations. The energetics of added Si atoms essentially determines epitaxial growth modes under different growth conditions (surface temperature, Si flux rate, and surface step density). We have determined the surface adatom diffusion barriers and cluster formation energies; we use these microscopic energy parameters to address the possibilities for macroscopic morphological evolution of the surface under different conditions.

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